20 V, complementary N/P-channel Trench MOSFET
从安世半导体购买
| SKU | 库存* | MOQ | 单位价格** | 数量 |
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从经销商处购买
| 卖方 | SKU | 库存 | MOQ | 1 | 10 | 100 | 1,000 | 10,000 | 购买 |
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| 卖方 | SKU | 库存 | MOQ | 1 | 10 | 100 | 1,000 | 10,000 | 购买 |
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| 卖方 | SKU | 库存 | MOQ | 1 | 10 | 100 | 1,000 | 10,000 | 购买 |
|---|
| 卖方 | SKU | 库存 | MOQ | 1 | 10 | 100 | 1,000 | 10,000 | 购买 |
|---|
| 卖方 | SKU | 库存 | MOQ | 1 | 10 | 100 | 1,000 | 10,000 | 购买 |
|---|
** 显示的单位价格是基于小量订单
*** 授权经销商销售的库存过剩、到期和停产产品由经销商保证产品的可靠性，不再由安世半导体保证
特性
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Trench MOSFET technology
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Very low threshold voltage for portable applications: VGS(th) = 0.7 V
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Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
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ElectroStatic Discharge (ESD) protection > 1 kV HBM
目标应用
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Relay driver
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High-speed line driver
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Level shifter
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Power management in battery-driven portables
参数类型
| 型号 | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | VGS [max] (V) | RDSon [max] @ VGS = 4.5 V (mΩ) | RDSon [max] @ VGS = 2.5 V (mΩ) | integrated gate-source ESD protection diodes | VESD HBM (V) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 4.5 V (nC) | Ptot [max] (W) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PMCXB900UE | SOT1216 | DFN1010B-6 | Production | N/P | 2 | 20 | 8 | 620 | 850 | Y | 1000 | 150 | 0.6 | 0.1 | 0.4 | 0.265 | 0.7 | N | 21.3 | 5.4 | 2013-10-07 |
PCB Symbol, Footprint and 3D Model
| Model Name | 描述 |
|---|---|
Package
| 型号 | 可订购的器件编号，（订购码(12NC)） | 状态 | 标示 | 封装 | 尺寸版本 | 回流焊/波峰焊 | 包装 |
|---|---|---|---|---|---|---|---|
| PMCXB900UE | PMCXB900UEZ ( 9340 671 43147 ) | Active | 10 00 00 |  DFN1010B-6 (SOT1216) | SOT1216 | REFLOW_BG-BD-1 | SOT1216_147 |
文档 (12)
| 文件名称 | 标题 | 类型 | 日期 |
|---|---|---|---|
| PMCXB900UE | 20 V, complementary N/P-channel Trench MOSFET | Data sheet | 2017-05-19 |
| AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2022-06-20 |
| AN11261 | RC Thermal Models | Application note | 2021-03-18 |
| AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
| AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
| AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
| nexperia_document_leaflet_SsMOS_for_mobile_2022 | High volume small-signal MOSFETs for mobile and portables, in WLCSP and leadless DFN packages | Leaflet | 2022-07-04 |
| nexperia_document_leaflet_SsMOS_for_mobile_2022-CHN | 适合移动和便携式设备的 大批量小信号MOSFET， 采用WLCSP和无引脚DFN封装 | Leaflet | 2022-07-04 |
| PMCXB900UE_12_12_2012 | PMCXB900UE Spice model | SPICE model | 2013-12-12 |
| TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2023-01-12 |
| SOT1216_147 | DFN1010B-6; Reel pack, SMD, 7" Q2/T3 Turned 90 degree product orientation Orderable part number ending, 147 or Z Ordering code (12NC) ending 147 | Packing information | 2015-10-06 |
| REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
支持
如果您需要设计/技术支持，请告知我们并填写 应答表, 我们会尽快回复您。
模型
| 文件名称 | 标题 | 类型 | 日期 |
|---|---|---|---|
| PMCXB900UE_12_12_2012 | PMCXB900UE Spice model | SPICE model | 2013-12-12 |
PCB Symbol, Footprint and 3D Model
| Model Name | 描述 |
|---|---|
订购、定价与供货
| 型号 | Orderable part number | Ordering code (12NC) | 包装 | Packing quantity | 在线购买 |
|---|---|---|---|---|---|
| PMCXB900UE | PMCXB900UEZ | 934067143147 | SOT1216_147 | - | 订单产品 |
样品
安世半导体客户可通过我们的销售机构或直接通过在线样品商店订购样品： https://extranet.nexperia.com.
样品订单通常需要2-4天寄送时间。
如果您尚未取得安世半导体的直接采购帐号，我们的全球与区域经销网络可以协助您取得样品。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.