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PMCXB900UE

20 V, complementary N/P-channel Trench MOSFET

Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

可订购部件

型号 可订购的器件编号 订购代码(12NC) 封装 从经销商处购买
PMCXB900UE PMCXB900UEZ 934067143147 SOT1216 订单产品

特性

  • Trench MOSFET technology

  • Very low threshold voltage for portable applications: VGS(th) = 0.7 V

  • Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm

  • ElectroStatic Discharge (ESD) protection > 1 kV HBM

目标应用

  • Relay driver

  • High-speed line driver

  • Level shifter

  • Power management in battery-driven portables

参数类型

型号Package versionPackage nameProduct statusChannel typeNr of transistorsVDS [max] (V)VGS [max] (V)RDSon [max] @ VGS = 4.5 V (mΩ)RDSon [max] @ VGS = 2.5 V (mΩ)integrated gate-source ESD protection diodesVESD HBM (V)Tj [max] (°C)ID [max] (A)QGD [typ] (nC)QG(tot) [typ] @ VGS = 4.5 V (nC)Ptot [max] (W)VGSth [typ] (V)Automotive qualifiedCiss [typ] (pF)Coss [typ] (pF)Date
PMCXB900UESOT1216DFN1010B-6ProductionN/P2208620850Y10001500.60.10.40.2650.7N21.35.42013-10-07

PCB Symbol, Footprint and 3D Model

Model Name描述

Package

型号可订购的器件编号,(订购码(12NC))状态标示封装尺寸版本回流焊/波峰焊包装
PMCXB900UEPMCXB900UEZ
( 9340 671 43147 )
Active10 00 00
DFN1010B-6
(SOT1216)
SOT1216REFLOW_BG-BD-1
SOT1216_147

环境信息

型号可订购的器件编号化学成分RoHSRHF指示符
PMCXB900UEPMCXB900UEZPMCXB900UE
品质及可靠性免责声明

文档 (12)

文件名称标题类型日期
PMCXB900UE20 V, complementary N/P-channel Trench MOSFETData sheet2017-05-19
AN10273Power MOSFET single-shot and repetitive avalanche ruggedness ratingApplication note2022-06-20
AN11261RC Thermal ModelsApplication note2021-03-18
AN11599Using power MOSFETs in parallelApplication note2016-07-13
AN10874_ZHLFPAK MOSFET thermal design guide, Chinese versionApplication note2020-04-30
AN11113_ZHLFPAK MOSFET thermal design guide - Part 2Application note2020-04-30
nexperia_document_leaflet_SsMOS_for_mobile_2022High volume small-signal MOSFETs for mobile and portables, in WLCSP and leadless DFN packagesLeaflet2022-07-04
nexperia_document_leaflet_SsMOS_for_mobile_2022-CHN适合移动和便携式设备的 大批量小信号MOSFET, 采用WLCSP和无引脚DFN封装Leaflet2022-07-04
PMCXB900UE_12_12_2012PMCXB900UE Spice modelSPICE model2013-12-12
TN00008Power MOSFET frequently asked questions and answersTechnical note2023-01-12
SOT1216_147DFN1010B-6; Reel pack, SMD, 7" Q2/T3 Turned 90 degree product orientation Orderable part number ending, 147 or Z Ordering code (12NC) ending 147Packing information2015-10-06
REFLOW_BG-BD-1Reflow soldering profileReflow soldering2021-04-06

支持

如果您需要设计/技术支持,请告知我们并填写 应答表, 我们会尽快回复您。

模型

文件名称标题类型日期
PMCXB900UE_12_12_2012PMCXB900UE Spice modelSPICE model2013-12-12

PCB Symbol, Footprint and 3D Model

Model Name描述

订购、定价与供货

型号Orderable part numberOrdering code (12NC)包装Packing quantity在线购买
PMCXB900UEPMCXB900UEZ934067143147SOT1216_147- 订单产品

样品

安世半导体客户可通过我们的销售机构或直接通过在线样品商店订购样品: https://extranet.nexperia.com.

样品订单通常需要2-4天寄送时间。

如果您尚未取得安世半导体的直接采购帐号,我们的全球与区域经销网络可以协助您取得样品。

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.