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PMF370XN

N-channel TrenchMOS extremely low level FET

Extremely low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

不建议用在新设计中(NRND)。
该产品已停产。参见单击此处了解停产信息和替代产品。

可订购部件

型号 可订购的器件编号 订购代码(12NC) 封装 从经销商处购买

特性

  • Low conduction losses due to low on-state resistance
  • Low threshold voltage
  • Saves PCB space due to small footprint (40 % smaller than SOT23)
  • Suitable for low gate drive sources
  • Surface-mounted package

目标应用

  • Driver circuits
  • Switching in portable appliances

参数类型

型号Package versionPackage nameProduct statusChannel typeNr of transistorsVDS [max] (V)VGS [max] (V)RDSon [max] @ VGS = 4.5 V (mΩ)RDSon [max] @ VGS = 2.5 V (mΩ)integrated gate-source ESD protection diodesTj [max] (°C)ID [max] (A)QGD [typ] (nC)QG(tot) [typ] @ VGS = 4.5 V (nC)Ptot [max] (W)VGSth [typ] (V)Automotive qualifiedCiss [typ] (pF)Coss [typ] (pF)Date
PMF370XN
NRND
SOT323SC-70End of lifeN13012440650N1500.870.180.650.561N378.52011-01-24

PCB Symbol, Footprint and 3D Model

Model Name描述

Package

下表中的所有产品型号已停产。参见表 停产信息 了解更多信息。

型号可订购的器件编号,(订购码(12NC))状态标示封装尺寸版本回流焊/波峰焊包装
PMF370XN
NRND
PMF370XN,115
( 9340 577 27115 )
Withdrawn / End-of-lifeF6%
SC-70
(SOT323)
SOT323REFLOW_BG-BD-1
WAVE_BG-BD-1
SOT323_115

停产信息

型号可订购的器件编号Ordering code最后一次购买日期最后一次交货日期替代产品状态备注
PMF370XN
NRND
PMF370XN,1159340577271152021-12-312022-06-30PMF250XNEFull withdrawal

环境信息

下表中的所有产品型号已停产。参见表 停产信息 了解更多信息。

型号可订购的器件编号化学成分RoHSRHF指示符
PMF370XN
NRND
PMF370XN,115暂无信息
品质及可靠性免责声明

文档 (13)

文件名称标题类型日期
PMF370XNN-channel TrenchMOS extremely low level FETData sheet2019-07-05
AN10273Power MOSFET single-shot and repetitive avalanche ruggedness ratingApplication note2022-06-20
AN11158Understanding power MOSFET data sheet parametersApplication note2020-07-06
AN11243Failure signature of Electrical Overstress on Power MOSFETsApplication note2017-12-21
AN11158_ZHUnderstanding power MOSFET data sheet parametersApplication note2021-01-04
AN11261RC Thermal ModelsApplication note2021-03-18
AN11599Using power MOSFETs in parallelApplication note2016-07-13
AN10874_ZHLFPAK MOSFET thermal design guide, Chinese versionApplication note2020-04-30
AN11113_ZHLFPAK MOSFET thermal design guide - Part 2Application note2020-04-30
TN00008Power MOSFET frequently asked questions and answersTechnical note2023-01-12
SOT323_115Reel pack for SMD, 7"; Q3/T4 product orientationPacking information2020-06-12
REFLOW_BG-BD-1Reflow soldering profileReflow soldering2021-04-06
WAVE_BG-BD-1Wave soldering profileWave soldering2021-09-08

支持

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PCB Symbol, Footprint and 3D Model

Model Name描述

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.