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PMPB19XP

20 V, single P-channel Trench MOSFET

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

可订购部件

型号 可订购的器件编号 订购代码(12NC) 封装 从经销商处购买
PMPB19XP PMPB19XP,115 934066871115 SOT1220 订单产品

特性

  • Trench MOSFET technology

  • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm

  • Exposed drain pad for excellent thermal conduction

  • Tin-plated 100 % solderable side pads for optical solder inspection

目标应用

  • Charging switch for portable devices

  • DC-to-DC converters

  • Power management in battery-driven portable devices

  • Hard disk and computing power management

参数类型

型号Package versionPackage nameProduct statusChannel typeNr of transistorsVDS [max] (V)VGS [max] (V)RDSon [max] @ VGS = 4.5 V (mΩ)RDSon [max] @ VGS = 2.5 V (mΩ)integrated gate-source ESD protection diodesTj [max] (°C)ID [max] (A)QGD [typ] (nC)QG(tot) [typ] @ VGS = 4.5 V (nC)Ptot [max] (W)VGSth [typ] (V)Automotive qualifiedCiss [typ] (pF)Coss [typ] (pF)Date
PMPB19XPSOT1220DFN2020MD‑6ProductionP1-201222.527N150-10.35.828.81.7-0.68N28902502012-09-20

PCB Symbol, Footprint and 3D Model

Model Name描述

Package

型号可订购的器件编号,(订购码(12NC))状态标示封装尺寸版本回流焊/波峰焊包装
PMPB19XPPMPB19XP,115
( 9340 668 71115 )
Active1R
DFN2020MD‑6
(SOT1220)
SOT1220REFLOW_BG-BD-1
SOT1220_115

环境信息

型号可订购的器件编号化学成分RoHSRHF指示符
PMPB19XPPMPB19XP,115PMPB19XP
品质及可靠性免责声明

文档 (15)

文件名称标题类型日期
PMPB19XP20 V, single P-channel Trench MOSFETData sheet2017-05-04
AN10273Power MOSFET single-shot and repetitive avalanche ruggedness ratingApplication note2022-06-20
AN11158Understanding power MOSFET data sheet parametersApplication note2020-07-06
AN11243Failure signature of Electrical Overstress on Power MOSFETsApplication note2017-12-21
AN11304MOSFET load switch PCB with thermal measurementApplication note2013-01-28
AN11158_ZHUnderstanding power MOSFET data sheet parametersApplication note2021-01-04
AN11261RC Thermal ModelsApplication note2021-03-18
AN11599Using power MOSFETs in parallelApplication note2016-07-13
AN10874_ZHLFPAK MOSFET thermal design guide, Chinese versionApplication note2020-04-30
AN11113_ZHLFPAK MOSFET thermal design guide - Part 2Application note2020-04-30
nexperia_report_aoi_inspection_dfn_201808Automatic Optical Inspection of DFN ComponentsReport2018-09-03
PMPB19XP_16_8_2012PMPB19XP Spice modelSPICE model2013-12-12
TN00008Power MOSFET frequently asked questions and answersTechnical note2023-01-12
SOT1220_115DFN2020MD-6; Reel pack for SMD, 7''; Q2/T3 product orientationPacking information2020-04-28
REFLOW_BG-BD-1Reflow soldering profileReflow soldering2021-04-06

支持

如果您需要设计/技术支持,请告知我们并填写 应答表, 我们会尽快回复您。

模型

文件名称标题类型日期
PMPB19XP_16_8_2012PMPB19XP Spice modelSPICE model2013-12-12

PCB Symbol, Footprint and 3D Model

Model Name描述

订购、定价与供货

型号Orderable part numberOrdering code (12NC)包装Packing quantity在线购买
PMPB19XPPMPB19XP,115934066871115SOT1220_115- 订单产品

样品

安世半导体客户可通过我们的销售机构或直接通过在线样品商店订购样品: https://extranet.nexperia.com.

样品订单通常需要2-4天寄送时间。

如果您尚未取得安世半导体的直接采购帐号,我们的全球与区域经销网络可以协助您取得样品。

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.