20 V, single P-channel Trench MOSFET
从安世半导体购买
| SKU | 库存* | MOQ | 单位价格** | 数量 |
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从经销商处购买
| 卖方 | SKU | 库存 | MOQ | 1 | 10 | 100 | 1,000 | 10,000 | 购买 |
|---|
| 卖方 | SKU | 库存 | MOQ | 1 | 10 | 100 | 1,000 | 10,000 | 购买 |
|---|
| 卖方 | SKU | 库存 | MOQ | 1 | 10 | 100 | 1,000 | 10,000 | 购买 |
|---|
| 卖方 | SKU | 库存 | MOQ | 1 | 10 | 100 | 1,000 | 10,000 | 购买 |
|---|
| 卖方 | SKU | 库存 | MOQ | 1 | 10 | 100 | 1,000 | 10,000 | 购买 |
|---|
** 显示的单位价格是基于小量订单
*** 授权经销商销售的库存过剩、到期和停产产品由经销商保证产品的可靠性，不再由安世半导体保证
特性
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Trench MOSFET technology
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Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
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Exposed drain pad for excellent thermal conduction
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Tin-plated 100 % solderable side pads for optical solder inspection
目标应用
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Charging switch for portable devices
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DC-to-DC converters
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Power management in battery-driven portable devices
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Hard disk and computing power management
参数类型
| 型号 | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | VGS [max] (V) | RDSon [max] @ VGS = 4.5 V (mΩ) | RDSon [max] @ VGS = 2.5 V (mΩ) | integrated gate-source ESD protection diodes | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 4.5 V (nC) | Ptot [max] (W) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PMPB19XP | SOT1220 | DFN2020MD‑6 | Production | P | 1 | -20 | 12 | 22.5 | 27 | N | 150 | -10.3 | 5.8 | 28.8 | 1.7 | -0.68 | N | 2890 | 250 | 2012-09-20 |
PCB Symbol, Footprint and 3D Model
| Model Name | 描述 |
|---|---|
Package
| 型号 | 可订购的器件编号，（订购码(12NC)） | 状态 | 标示 | 封装 | 尺寸版本 | 回流焊/波峰焊 | 包装 |
|---|---|---|---|---|---|---|---|
| PMPB19XP | PMPB19XP,115 ( 9340 668 71115 ) | Active | 1R |  DFN2020MD‑6 (SOT1220) | SOT1220 | REFLOW_BG-BD-1 | SOT1220_115 |
文档 (15)
| 文件名称 | 标题 | 类型 | 日期 |
|---|---|---|---|
| PMPB19XP | 20 V, single P-channel Trench MOSFET | Data sheet | 2017-05-04 |
| AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2022-06-20 |
| AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2020-07-06 |
| AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2017-12-21 |
| AN11304 | MOSFET load switch PCB with thermal measurement | Application note | 2013-01-28 |
| AN11158_ZH | Understanding power MOSFET data sheet parameters | Application note | 2021-01-04 |
| AN11261 | RC Thermal Models | Application note | 2021-03-18 |
| AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
| AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
| AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
| nexperia_report_aoi_inspection_dfn_201808 | Automatic Optical Inspection of DFN Components | Report | 2018-09-03 |
| PMPB19XP_16_8_2012 | PMPB19XP Spice model | SPICE model | 2013-12-12 |
| TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2023-01-12 |
| SOT1220_115 | DFN2020MD-6; Reel pack for SMD, 7''; Q2/T3 product orientation | Packing information | 2020-04-28 |
| REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
支持
如果您需要设计/技术支持，请告知我们并填写 应答表, 我们会尽快回复您。
模型
| 文件名称 | 标题 | 类型 | 日期 |
|---|---|---|---|
| PMPB19XP_16_8_2012 | PMPB19XP Spice model | SPICE model | 2013-12-12 |
PCB Symbol, Footprint and 3D Model
| Model Name | 描述 |
|---|---|
订购、定价与供货
| 型号 | Orderable part number | Ordering code (12NC) | 包装 | Packing quantity | 在线购买 |
|---|---|---|---|---|---|
| PMPB19XP | PMPB19XP,115 | 934066871115 | SOT1220_115 | - | 订单产品 |
样品
安世半导体客户可通过我们的销售机构或直接通过在线样品商店订购样品： https://extranet.nexperia.com.
样品订单通常需要2-4天寄送时间。
如果您尚未取得安世半导体的直接采购帐号，我们的全球与区域经销网络可以协助您取得样品。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.