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PMZ1000UN

N-channel TrenchMOS standard level FET

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

不建议用在新设计中(NRND)。

可订购部件

型号 可订购的器件编号 订购代码(12NC) 封装 从经销商处购买
PMZ1000UN PMZ1000UN,315 934063419315 SOT883 订单产品

特性

  • Fast switching

  • Low conduction losses due to low on-state resistance

  • Saves PCB space due to small footprint (90 % smaller than SOT23)

  • Suitable for use in compact designs due to low profile (55 % lower than SOT23)

目标应用

  • Driver circuits

  • Switching in portable appliances

参数类型

型号Package versionPackage nameProduct statusChannel typeNr of transistorsVDS [max] (V)VGS [max] (V)RDSon [max] @ VGS = 4.5 V (mΩ)RDSon [max] @ VGS = 2.5 V (mΩ)integrated gate-source ESD protection diodesTj [max] (°C)ID [max] (A)QGD [typ] (nC)QG(tot) [typ] @ VGS = 4.5 V (nC)Ptot [max] (W)VGSth [typ] (V)Automotive qualifiedCiss [typ] (pF)Coss [typ] (pF)Date
PMZ1000UN
NRND
SOT883DFN1006-3Not for design inN130810001100N1500.480.20.890.350.7N437.72011-01-24

PCB Symbol, Footprint and 3D Model

Model Name描述

Package

型号可订购的器件编号,(订购码(12NC))状态标示封装尺寸版本回流焊/波峰焊包装
PMZ1000UN
NRND
PMZ1000UN,315
( 9340 634 19315 )
Active6N
DFN1006-3
(SOT883)
SOT883REFLOW_BG-BD-1
SOT883_315

环境信息

型号可订购的器件编号化学成分RoHSRHF指示符
PMZ1000UN
NRND
PMZ1000UN,315PMZ1000UN
品质及可靠性免责声明

文档 (13)

文件名称标题类型日期
PMZ1000UNN-channel TrenchMOS standard level FETData sheet2010-09-22
AN10273Power MOSFET single-shot and repetitive avalanche ruggedness ratingApplication note2022-06-20
AN11158Understanding power MOSFET data sheet parametersApplication note2020-07-06
AN11243Failure signature of Electrical Overstress on Power MOSFETsApplication note2017-12-21
AN11158_ZHUnderstanding power MOSFET data sheet parametersApplication note2021-01-04
AN11261RC Thermal ModelsApplication note2021-03-18
AN11599Using power MOSFETs in parallelApplication note2016-07-13
AN10874_ZHLFPAK MOSFET thermal design guide, Chinese versionApplication note2020-04-30
AN11113_ZHLFPAK MOSFET thermal design guide - Part 2Application note2020-04-30
PMZ1000UN_14_02_2012PMZ1000UN.14_02_2012 Spice parameterSPICE model2012-04-16
TN00008Power MOSFET frequently asked questions and answersTechnical note2023-01-12
SOT883_315DFN1006-3; Reel pack for SMD, 7"; Q3/T4 product orientation Packing information2021-01-27
REFLOW_BG-BD-1Reflow soldering profileReflow soldering2021-04-06

支持

如果您需要设计/技术支持,请告知我们并填写 应答表, 我们会尽快回复您。

模型

文件名称标题类型日期
PMZ1000UN_14_02_2012PMZ1000UN.14_02_2012 Spice parameterSPICE model2012-04-16

PCB Symbol, Footprint and 3D Model

Model Name描述

订购、定价与供货

型号Orderable part numberOrdering code (12NC)包装Packing quantity在线购买
PMZ1000UNPMZ1000UN,315934063419315SOT883_315- 订单产品

样品

安世半导体客户可通过我们的销售机构或直接通过在线样品商店订购样品: https://extranet.nexperia.com.

样品订单通常需要2-4天寄送时间。

如果您尚未取得安世半导体的直接采购帐号,我们的全球与区域经销网络可以协助您取得样品。

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.