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PMZ1000UN

N-channel TrenchMOS standard level FET

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

不建议用在新设计中(NRND)。

Features and benefits

  • Fast switching

  • Low conduction losses due to low on-state resistance

  • Saves PCB space due to small footprint (90 % smaller than SOT23)

  • Suitable for use in compact designs due to low profile (55 % lower than SOT23)

Applications

  • Driver circuits

  • Switching in portable appliances

参数类型

型号 Package version Package name Product status Channel type Nr of transistors VDS [max] (V) VGS [max] (V) RDSon [max] @ VGS = 4.5 V (mΩ) RDSon [max] @ VGS = 2.5 V (mΩ) integrated gate-source ESD protection diodes Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 4.5 V (nC) Ptot [max] (W) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
PMZ1000UN
SOT883 DFN1006-3 Not for design in N 1 30 8 1000 1100 N 150 0.48 0.2 0.89000005 0.35 0.7 N 43 7.7000003 2011-01-24

封装

型号 可订购的器件编号,(订购码(12NC)) 状态 标示 封装 外形图 回流焊/波峰焊 包装
PMZ1000UN
PMZ1000UN,315
(934063419315)
Active 6N SOT883
DFN1006-3
(SOT883)
SOT883 REFLOW_BG-BD-1
SOT883_315

环境信息

型号 可订购的器件编号 化学成分 RoHS RHF指示符
PMZ1000UN
PMZ1000UN,315 PMZ1000UN rohs rhf rhf
品质及可靠性免责声明

文档 (17)

文件名称 标题 类型 日期
PMZ1000UN N-channel TrenchMOS standard level FET Data sheet 2010-09-22
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11158_ZH Understanding power MOSFET data sheet parameters Application note 2021-01-04
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
SOT883 3D model for products with SOT883 package Design support 2020-01-22
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
DFN1006-3_SOT883_mk plastic, leadless ultra small package; 3 terminals; 0.65 mm pitch; 1 mm x 0.6 mm x 0.48 mm body Marcom graphics 2017-01-28
SOT883 plastic, leadless ultra small package; 3 terminals; 0.35 mm pitch; 1 mm x 0.6 mm x 0.48 mm body Package information 2022-05-20
SOT883_315 DFN1006-3; Reel pack for SMD, 7"; Q3/T4 product orientation Packing information 2021-01-27
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06
PMZ1000UN_14_02_2012 PMZ1000UN.14_02_2012 Spice parameter SPICE model 2012-04-16
TN00008 Power MOSFET frequently asked questions and answers Technical note 2023-01-12

支持

如果您需要设计/技术支持,请告知我们并填写 应答表 我们会尽快回复您。

模型

文件名称 标题 类型 日期
PMZ1000UN_14_02_2012 PMZ1000UN.14_02_2012 Spice parameter SPICE model 2012-04-16
SOT883 3D model for products with SOT883 package Design support 2020-01-22

订购、定价与供货

型号 Orderable part number Ordering code (12NC) 状态 包装 Packing Quantity 在线购买
PMZ1000UN PMZ1000UN,315 934063419315 Active SOT883_315 10,000 订单产品

样品

作为 Nexperia 的客户,您可以通过我们的销售机构订购样品。

如果您没有 Nexperia 的直接账户,我们的全球和地区分销商网络可为您提供 Nexperia 样品支持。查看官方经销商列表

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

可订购部件

型号 可订购的器件编号 订购代码(12NC) 封装 从经销商处购买
PMZ1000UN PMZ1000UN,315 934063419315 SOT883 订单产品