双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

NP100T12P2T3

1200 V, 100 A Field Stop Trench IGBT

IGBT power module provides ultra-low conduction loss as well as short circuit ruggedness. They are designed for applications such as inverters for motor drivers and servo drivers.

此产品已停产

Features and benefits

  • Low switching losses and low saturation voltage VCE(sat)
  • 10 μs short circuit capability
  • VCE(sat) with positive temperature coefficient
  • Maximum junction temperature 175 °C
  • Low stray inductance package
  • Fast and soft reverse recovery anti-parallel free-wheeling diode
  • RoHS compliant product
  • Integrated NTC thermistor temperature sensor

Applications

  • Inverter for motor drivers and servo drivers
  • AC/DC servo drive amplifier

封装

下表中的所有产品型号均已停产 。

型号 可订购的器件编号,(订购码(12NC)) 状态 标示 封装 外形图 回流焊/波峰焊 包装
NP100T12P2T3 NP100T12P2T3Z
(935691636333)
Discontinued / End-of-life LOGO; please refer to marking blank NP100T12P2T3 SOT8053-1
NP2-35P
(SOT8053-1)
SOT8053-1 SOT8053-1_333

环境信息

下表中的所有产品型号均已停产 。

型号 可订购的器件编号 化学成分 RoHS RHF指示符
NP100T12P2T3 NP100T12P2T3Z NP100T12P2T3 rohs rhf
品质及可靠性免责声明

文档 (4)

文件名称 标题 类型 日期
NP100T12P2T3 1200 V, 100 A, Power Integrated Module Data sheet 2024-02-20
AN90043 Nexperia Power Module family product introduction Application note 2024-02-20
AN90063 Questions about package outline drawings Application note 2025-10-22
SOT8053-1 plastic house, through hole solderable pin with copper baseplate;35 pins; 62.5 mm x 122.5 mm x 17 mm body Package information 2024-02-27

支持

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Longevity

The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.


模型

No documents available

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.