双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

NXT4556

SIM card interface level translator

The NXT4556 device is built for interfacing a SIM card with a single low-voltage host side interface. The NXT4556 has three level translators to convert the data, RST and CLK signals between a SIM card and a host microcontroller. A high speed level translation capable of supporting class-B, class-C SIM cards. VCC_SIM power-down initiates a shutdown sequence on SIM card pins in accordance with ISO-7816-3.

The NXT4556 is compliant with all ETSI, IMT-2000 and ISO-7816 SIM/Smart card interface requirements.

Features and benefits

  • Support SIM cards and eSIM with supply voltages 1.62 V to 3.3 V

  • Host micro-controller operating voltage range: 1.08 V to 1.98 V

  • Automatic level translation of I/O, RST and CLK between SIM card and host side interface with capacitance isolation

  • Incorporates shutdown feature for the SIM card signals according to ISO-7816-3

  • High Vdis(UVLO_AC) switching level, arranging quick shut down when VCC_SIM powers down

  • Integrated pull-up resistors; no external resistor required

  • Integrated EMI Filters suppresses higher harmonics of digital I/O's

  • Low current shutdown mode < 1 μA

  • Supports clock speed beyond 5 MHz clock

  • Pb-free, Restriction of Hazardous Substances (RoHS) compliant and free of halogen and antimony (Dark Green compliant)

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

    • IEC61000-4-2 level 4, contact and air discharge on all SIM card-side pins exceeds 8000 V and 15000 V

  • Available in 9-pin wafer level chip-scale package (WLCSP); 9 bumps; 1.06 mm x 1.06 mm x 0.43 mm body; 0.35 mm pitch

  • Specified from -40 °C to +85 °C

Applications

  • NXT4556 can be used with a range of SIM card attached devices including:

    • Mobile and personal phones

    • Wireless modems

    • SIM card terminals

参数类型

型号 VCC(A) (V) VCC(B) (V) Logic switching levels Output drive capability (mA) tpd (ns) Nr of bits Power dissipation considerations Tamb (°C) Package name Category
NXT4556AUR 1.08 - 1.98 1.62 - 3.3 CMOS ± 1 20 3 low -40~85 WLCSP9 Application specific
NXT4556UP 1.08 - 1.98 1.62 - 3.3 CMOS ± 1 20 3 low -40~85 106 0.15 - WLCSP9 Application specific

封装

型号 可订购的器件编号，（订购码(12NC)） 状态 标示 封装 外形图 回流焊/波峰焊 包装
NXT4556AUR NXT4556AURZ
(935691831336)		 Active z6 SOT8057-1
WLCSP9
(SOT8057-1) 		SOT8057-1 SOT8057-1_336
NXT4556UP NXT4556UPAZ
(935691190336)		 Active z6 SOT8027-1
WLCSP9
(SOT8027-1) 		SOT8027-1 SOT8027-1_336

下表中的所有产品型号均已停产 。

型号 可订购的器件编号，（订购码(12NC)） 状态 标示 封装 外形图 回流焊/波峰焊 包装
NXT4556UP NXT4556UPZ
(935691190084)		 Withdrawn / End-of-life z6 SOT8027-1
WLCSP9
(SOT8027-1) 		SOT8027-1 暂无信息

环境信息

型号 可订购的器件编号 化学成分 RoHS RHF指示符
NXT4556AUR NXT4556AURZ NXT4556AUR rohs rhf rhf
NXT4556UP NXT4556UPAZ NXT4556UP rohs rhf rhf

下表中的所有产品型号均已停产 。

型号 可订购的器件编号 化学成分 RoHS RHF指示符
NXT4556UP NXT4556UPZ NXT4556UP rohs rhf rhf
品质及可靠性免责声明

文档 (6)

文件名称 标题 类型 日期
NXT4556 SIM card interface level translator Data sheet 2024-07-31
AN90063 Questions about package outline drawings Application note 2025-06-13
SOT8027-1 3D model for products with SOT8027-1 package Design support 2023-02-07
nxt4556 NXT4556 IBIS model IBIS model 2021-08-31
SOT8057-1 wafer level chip-scale pakage; 9 bumps; 0.92 × 0.92 × 0.42 mm body Package information 2023-06-13
SOT8027-1 wafer level chip-scale package; 9 bumps; 1.06 mm x 1.06 mm x 0.43 mm body Package information 2022-09-27

支持

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模型

文件名称 标题 类型 日期
SOT8027-1 3D model for products with SOT8027-1 package Design support 2023-02-07
nxt4556 NXT4556 IBIS model IBIS model 2021-08-31

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