双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

SiC power devices

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

High-voltage GaN (≥ 650 V)

Efficient power, redefined with GaN

Nexperia’s 650 V and 700 V GaN devices enable highly efficient, high-frequency power conversion in demanding applications. Ultra-fast switching and low losses enhance efficiency and power density, enabling designers to reduce system size, simplify architectures and optimize thermal performance. Built for robust high-voltage operation, Nexperia’s GaN technology provides a scalable and reliable foundation for next-generation power systems.

产品

型号 描述 状态 快速访问
GAN039-650NBB 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package Production
GAN039-650NTB 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package Production
GAN041-650WSB 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package Production
GAN063-650WSA 650 V, 50 mΩ Gallium Nitride (GaN) FET EndOfLife
GAN080-650EBE 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package Production
GAN111-650WSB 650 V, 97 mOhm Gallium Nitride (GaN) FET in a TO-247 package Production
GAN140-650EBE 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package Production
GAN140-650FBE 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package Production
GAN190-650EBE 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package Production
GAN190-650FBE 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package Production
GANC035-650TBH 650 V, 35 mOhm Gallium Nitride (GaN) FET in a TOLL package Production
GANC035-650UTH 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TOLT package Production
GANC035-650VSH 650 V, 35 mOhm Gallium Nitride (GaN) FET in a TO-247-4 package Production
GANC050-650TBH 650 V, 50 mOhm Gallium Nitride (GaN) FET in a TOLL package Development
GANC050-650UTH 650 V, 50 mOhm Gallium Nitride (GaN) FET in a TOLT package Development
GANC050-650VSH 650 V, 50 mOhm Gallium Nitride (GaN) FET in a TO-247-4 package Development
GANC050-650WSH 650 V, 50 mOhm Gallium Nitride (GaN) FET in a TO-247-3 package Development
GANC070-650TBH 650 V, 70 mOhm Gallium Nitride (GaN) FET in a TOLL package Production
GANC070-650UTH 650 V, 70 mOhm Gallium Nitride (GaN) FET in a TOLT package Production
GANC070-650WSH 650 V, 70 mOhm Gallium Nitride (GaN) FET in a TO-247 package Production
GANE140-700BBA 700 V, 140 mOhm Gallium Nitride (GaN) FET in DPAK package Production
GANE190-700BBA 700 V, 190 mOhm Gallium Nitride (GaN) FET in DPAK package Production
GANE240-700BBA 700 V, 240 mOhm Gallium Nitride (GaN) FET in DPAK package Production
GANE350-650FBA 650 V, 350 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package Production
GANE350-700BBA 700 V, 350 mOhm Gallium Nitride (GaN) FET in DPAK package Production

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交叉参考