双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

SiC power devices

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

650 - 700 V low-power GaN devices

Compact efficiency, redefined

Nexperia’s 650 V to 700 V, low-power GaN devices are optimized for compact, high-frequency power conversion where efficiency and footprint are critical. Ultra-fast switching and low losses enable smaller, lighter designs without compromising efficiency. Combined with compact, low-inductance packaging, Nexperia’s high-voltage GaN portfolio delivers reliable, easy-to-integrate solutions for next-generation low-power systems.

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650 - 700 V low-power GaN devices
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产品

型号 描述 状态 快速访问
GAN041-650WSB 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package Production
GAN080-650EBE 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package Production
GAN111-650WSB 650 V, 97 mOhm Gallium Nitride (GaN) FET in a TO-247 package Production
GAN140-650EBE 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package Production
GAN140-650FBE 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package Production
GAN190-650EBE 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package Production
GAN190-650FBE 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package Production
GANC035-650VSH 650 V, 35 mOhm Gallium Nitride (GaN) FET in a TO-247-4 package Production
GANE140-700BBA 700 V, 140 mOhm Gallium Nitride (GaN) FET in DPAK package Production
GANE190-700BBA 700 V, 190 mOhm Gallium Nitride (GaN) FET in DPAK package Production
GANE240-700BBA 700 V, 240 mOhm Gallium Nitride (GaN) FET in DPAK package Production
GANE350-650FBA 650 V, 350 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package Production
GANE350-700BBA 700 V, 350 mOhm Gallium Nitride (GaN) FET in DPAK package Production
Visit our documentation center for all documentation

Application note (2)
文件名称 标题 类型 日期
AN90041.pdf Gate drive circuit design for Nexperia 650 V Enhancement mode (e-mode) GaN FETs Application note 2023-05-09
AN90021.pdf Power GaN technology: the need for efficient power conversion Application note 2020-08-14

Leaflet (2)
文件名称 标题 类型 日期
nexperia_document_leaflet_GaNFETs_2025.pdf Power GaN FETs Leaflet 2025-03-10
nexperia_document_leaflet_GaNFETs_2025-CHN.pdf Power GaN FETs Chinese Leaflet 2025-03-10

Marcom graphics (1)
文件名称 标题 类型 日期
DFN8080-8_SOT8074-1-combi_mk.png plastic thermal enhanced small outline package; no leads; 8 terminals; body: 8 x 8 x 0.9 mm Marcom graphics 2023-04-20

User manual (1)
文件名称 标题 类型 日期
UM90045.pdf NX-HB-GAN111UL 2.0 kW half-bridge evaluation board user guide User manual 2025-02-10

White paper (3)
文件名称 标题 类型 日期
nexperia_whitepaper_gan_need_for_efficient_conversion_Japanese.pdf Whitepaper: GaN need for efficient conversion (Japanese) White paper 2021-05-20
nexperia_whitepaper_gan_need_for_efficient_conversion_CHN.pdf 白皮书: 功率GaN技术： 高效功率转换的需求 White paper 2020-08-17
nexperia_whitepaper_gan_need_for_efficient_conversion.pdf White paper: Power GaN technology: the need for efficient power conversion White paper 2020-07-23

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