双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

SiC power devices

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

650 V high-power GaN devices

Powering next-level high-density performance

Nexperia’s 650 V high-power GaN solutions enable highly efficient, high-density power conversion at multi‑kilowatt levels. Ultra-fast switching and low-switching losses significantly improve efficiency, while reducing system size and simplifying thermal management.. Leveraging advanced, low-inductance packaging with optimized thermal performance, Nexperia’s GaN portfolio delivers scalable, reliable operation. Empowering next-generation power systems across energy, industrial and mobility applications.

参数搜索

650 V high-power GaN devices
数据加载中，请稍候...
参数搜索不可用。

产品

型号 描述 状态 快速访问
GAN039-650NBB 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package Production
GAN039-650NTB 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package Production
GAN063-650WSA 650 V, 50 mΩ Gallium Nitride (GaN) FET EndOfLife
GANC035-650TBH 650 V, 35 mOhm Gallium Nitride (GaN) FET in a TOLL package Production
GANC035-650UTH 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TOLT package Production
GANC050-650TBH 650 V, 50 mOhm Gallium Nitride (GaN) FET in a TOLL package Development
GANC050-650UTH 650 V, 50 mOhm Gallium Nitride (GaN) FET in a TOLT package Development
GANC050-650VSH 650 V, 50 mOhm Gallium Nitride (GaN) FET in a TO-247-4 package Development
GANC050-650WSH 650 V, 50 mOhm Gallium Nitride (GaN) FET in a TO-247-3 package Development
GANC070-650TBH 650 V, 70 mOhm Gallium Nitride (GaN) FET in a TOLL package Production
GANC070-650UTH 650 V, 70 mOhm Gallium Nitride (GaN) FET in a TOLT package Production
GANC070-650WSH 650 V, 70 mOhm Gallium Nitride (GaN) FET in a TO-247 package Production
Visit our documentation center for all documentation

Application note (6)
文件名称 标题 类型 日期
AN90005.pdf Understanding Power GaN FET data sheet parameters Application note 2026-06-09
AN90053.pdf Advanced SPICE models for Nexperia cascode Gallium Nitride (GaN) FETs Application note 2025-12-09
AN90030_translated.pdf ハーフブリッジ・トポロジーにおけるNexperia製GaN FETの並列 Application note 2023-04-03
AN90030.pdf Paralleling of Nexperia cascode GaN FETs in half-bridge topology Application note 2023-03-22
AN90006.pdf Circuit design and PCB layout recommendations for GaN FET half bridges Application note 2019-11-15
AN90004.pdf Probing considerations for fast switching applications Application note 2019-11-15

Leaflet (4)
文件名称 标题 类型 日期
nexperia_document_leaflet_GaNFETs_2025.pdf Power GaN FETs Leaflet 2025-03-10
nexperia_document_leaflet_GaNFETs_2025-CHN.pdf Power GaN FETs Chinese Leaflet 2025-03-10
nexperia_document_leaflet_GaN_CCPAK_2023_CHN.pdf CCPAK GaN FETs Chinese Leaflet 2023-10-25
nexperia_document_leaflet_GaN_CCPAK_2023.pdf CCPAK GaN FETs Leaflet 2023-10-25

Marcom graphics (1)
文件名称 标题 类型 日期
CCPAK1212_SOT8000-Combi_mk.png Plastic, surface mounted copper clip package (CCPAK1212); 13 terminals; 2.0 mm pitch, 12 mm x 12 mm x 2.5 mm body Marcom graphics 2023-04-20

Technical note (1)
文件名称 标题 类型 日期
TN90004.pdf An insight into Nexperia Power GaN technology – Applications, quality, reliability and scalability Technical note 2020-07-21

User manual (1)
文件名称 标题 类型 日期
Nexperia_document_book_MOSFETGaNFETApplicationHandbook_2020.pdf MOSFET & GaN FET Application Handbook User manual 2020-11-05

White paper (3)
文件名称 标题 类型 日期
nexperia_whitepaper_gan_need_for_efficient_conversion_Japanese.pdf Whitepaper: GaN need for efficient conversion (Japanese) White paper 2021-05-20
nexperia_whitepaper_gan_need_for_efficient_conversion_CHN.pdf 白皮书: 功率GaN技术： 高效功率转换的需求 White paper 2020-08-17
nexperia_whitepaper_gan_need_for_efficient_conversion.pdf White paper: Power GaN technology: the need for efficient power conversion White paper 2020-07-23

如果您有支持方面的疑问，请告知我们。如需获得设计支持，请告知我们并填写技术支持表格，我们会尽快回复您。

请访问我们的社区论坛或联系我们。


交叉参考