双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

SiC power devices

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

Low-voltage GaN (< 80 V)

Efficiency for compact high-current systems

Nexperia’s low-voltage (15 V to 60 V) GaN platform brings wide-bandgap efficiency to high-performance low-voltage power conversion. Featuring ultra-low RDS(on), very low QG and QOSS, and zero reverse recovery charge, these devices enable higher switching frequencies, reduced losses and increased power density compared to silicon MOSFETs. Available in compact top-side cooling QFN packages, they support efficient thermal management and simplified integration. Ideal for datacom, AI servers, motor drives, fast charging and power supplies, they enable smaller, cooler and more efficient next-generation designs.

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