双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

SiC power devices

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

Low-voltage GaN (< 80 V)

Efficiency for compact high-current systems

Nexperia’s low-voltage (15 V to 60 V) GaN platform brings wide-bandgap efficiency to high-performance low-voltage power conversion. Featuring ultra-low RDS(on), very low QG and QOSS, and zero reverse recovery charge, these devices enable higher switching frequencies, reduced losses and increased power density compared to silicon MOSFETs. Available in compact top-side cooling QFN packages, they support efficient thermal management and simplified integration. Ideal for datacom, AI servers, motor drives, fast charging and power supplies, they enable smaller, cooler and more efficient next-generation designs.

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Low-voltage GaN (< 80 V)
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产品

型号 描述 状态 快速访问
GANE0R3-015QTL 18 V, 0.28 mOhm Gallium Nitride (GaN) FET in a QFN 3.3 mm x 3.3 mm TSC package Development
GANE0R4-025QTL 25 V, 0.41 mOhm Gallium Nitride (GaN) FET in a QFN 3.3 mm x 3.3 mm TSC package Development
GANE0R5-040QTL 40 V, 0.5 mOhm Gallium Nitride (GaN) FET in a QFN 3.3 mm x 3.3 mm TSC package Development
GANE0R8-040QTL 40 V, 0.84 mOhm Gallium Nitride (GaN) FET in a QFN 3.3 mm x 2.6 mm TSC package Development
Visit our documentation center for all documentation

Application note (2)
文件名称 标题 类型 日期
AN90005.pdf Understanding Power GaN FET data sheet parameters Application note 2026-10-01
AN90004.pdf Probing considerations for fast switching applications Application note 2026-10-01

Leaflet (1)
文件名称 标题 类型 日期
nexperia_document_leaflet_GaNFETs_2026.pdf Power GaN FETs Leaflet 2026-10-01

User manual (1)
文件名称 标题 类型 日期
Nexperia_document_book_MOSFETGaNFETApplicationHandbook_2020.pdf MOSFET & GaN FET Application Handbook User manual 2026-10-01

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交叉参考