双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

SiC power devices

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

Medium-voltage GaN (80 - 200 V)

Superior performance across all applications

Nexperia’s medium-voltage (80 V to 200 V) GaN portfolio delivers a common technology platform for high-efficiency, high-density power conversion with outstanding dynamic performance. Ultra-low RDS(on), low QG and QOSS, alongside clean, fast switching capabilities, enable smaller, cooler and more efficient designs than conventional silicon solutions. Scalable and robust, the platform supports applications from compact low-power systems to demanding higher-power architectures, driving the next generation of power electronics.

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Medium-voltage GaN (80 - 200 V)
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产品

型号 描述 状态 快速访问
GAN3R2-100CBE 100 V, 3.2 mOhm Gallium Nitride (GaN) FET in a 3.5 mm x 2.13 mm Wafer Level Chip-Scale Package (WLCSP) Production
GAN7R0-150LBE 150 V, 7 mOhm Gallium Nitride (GaN) FET in a 2.2 mm x 3.2 mm x 0.774 mm Land Grid Array (LGA) package Production
GANE011-080CBA AEC-Q101 qualified 80 V, 11 mOhm Gallium Nitride (GaN) FET in a 1.5 mm x 1.5 mm Wafer Level Chip-Scale Package (WLCSP) Production
GANE1R8-100QBA 100 V, 1.8 mOhm Gallium Nitride (GaN) FET in a 4.0 mm x 6.0 mm Very-Thin-Profile Quad Flat No-Lead Package (VQFN) Production
GANE2R7-100CBA 100 V, 2.7 mOhm Gallium Nitride (GaN) FET in a 4.45 mm x 2.30 mm Wafer Level Chip-Scale Package (WLCSP) Production
GANE3R9-150QBA 150 V, 3.9 mOhm Gallium Nitride (GaN) FET in a 4.0 mm x 6.0 mm Very-Thin-Profile Quad Flat No-Lead Package (VQFN) Production
GANE7R0-100CBA 100 V, 7.0 mOhm Gallium Nitride (GaN) FET in a 2.5 mm x 1.5 mm Wafer Level Chip-Scale Package (WLCSP) Production
Visit our documentation center for all documentation

Application note (1)

文件名称 标题 类型 日期
AN90021.pdf Power GaN technology: the need for efficient power conversion Application note 2020-08-14

Leaflet (2)

文件名称 标题 类型 日期
nexperia_document_leaflet_GaNFETs_2025.pdf Power GaN FETs Leaflet 2025-03-10
nexperia_document_leaflet_GaNFETs_2025-CHN.pdf Power GaN FETs Chinese Leaflet 2025-03-10

Marcom graphics (1)

文件名称 标题 类型 日期
WLCSP8_SOT8072-combi_mk.png wafer level chip-scale package; 8 solder bars; body: 3.5 x 2.13 x 0.429 mm Marcom graphics 2023-04-20

White paper (3)

文件名称 标题 类型 日期
nexperia_whitepaper_gan_need_for_efficient_conversion_Japanese.pdf Whitepaper: GaN need for efficient conversion (Japanese) White paper 2021-05-20
nexperia_whitepaper_gan_need_for_efficient_conversion_CHN.pdf 白皮书: 功率GaN技术: 高效功率转换的需求 White paper 2020-08-17
nexperia_whitepaper_gan_need_for_efficient_conversion.pdf White paper: Power GaN technology: the need for efficient power conversion White paper 2020-07-23

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