双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

SiC power devices

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)
74HC4515D

74HC4515D End of life

4-to-16 line decoder/demultiplexer with input latches; inverting

The 74HC4515 is a 4-to-16 line decoder/demultiplexer having four binary weighted address inputs (A0 to A3) with latches, a latch enable input (LE), an enable input (E) and 16 inverting outputs (Q0, to Q15).

When LE is HIGH, the selected output is determined by the data on An. When LE goes LOW, the last data present at An are stored in the latches and the outputs remain stable. When E is LOW, the selected output, determined by the contents of the latch, is LOW. When E is HIGH, all outputs are HIGH. The enable input E does not affect the state of the latch. When the device is used as a demultiplexer, E is the data input and A0 to A3 are the address inputs.

Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to voltages in excess of VCC.
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产品细节

Features and benefits

  • Inverting outputs
  • CMOS input levels
  • 16-line demultiplexing capability
  • Decodes 4 binary-coded inputs into 16 mutually-exclusive outputs
  • Complies with JEDEC standard no. 7 A
  • ESD protection:
    • HBM JESD22-A114F exceeds 2000 V
    • MM JESD22-A115-A exceeds 200 V
  • Specified from -40 °C to +85 °C and -40 °C to +125 °C

Applications

  • Digital multiplexing
  • Address decoding
  • Hexadecimal/BCD decoding

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Longevity

The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.

交互式数据手册

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册