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Click here for more informationBUK7E1R8-40E
N-channel TrenchMOS standard level FET
Standard level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
Features and benefits
- AEC-Q101 compliant
- Repetitive avalanche rated
- Suitable for thermally demanding environments due to 175 °C rating
- True standard level gate with VGS(th) rating of greater than 1 V at 175 °C
Applications
- 12 V Automotive systems
- Electric and electro-hydraulic power steering
- Motors, lamps and solenoid control
- Start-Stop micro-hybrid applications
- Transmission control
- Ultra high performance power switching
参数类型
型号 | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
BUK7E1R8-40E | SOT226 | I2PAK | End of life | N | 1 | 40 | 1.8 | 175 | 120 | 48.2 | 145 | 349 | 94 | 3 | Y | 8500 | 1620 | 2012-09-05 |
封装
下表中的所有产品型号均已停产 。
型号 | 可订购的器件编号,(订购码(12NC)) | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
---|---|---|---|---|---|---|---|
BUK7E1R8-40E | BUK7E1R8-40E,127 (934066512127) |
Obsolete |
I2PAK (SOT226) |
SOT226 | 暂无信息 |
Series
文档 (19)
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
BUK7E1R8-40E | N-channel TrenchMOS standard level FET | Data sheet | 2017-04-20 |
AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2022-06-20 |
AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
AN11156 | Using Power MOSFET Zth Curves | Application note | 2021-01-04 |
AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2020-07-06 |
AN11158_ZH | Understanding power MOSFET data sheet parameters | Application note | 2021-01-04 |
AN11160 | Designing RC Snubbers | Application note | 2023-02-03 |
AN11172 | Mounting instructions for SOT78 (TO-220AB); SOT186A (TO-220F) | Application note | 2021-05-21 |
AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2017-12-21 |
AN11261 | RC Thermal Models | Application note | 2021-03-18 |
AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
SOT226 | 3D model for products with SOT226 package | Design support | 2017-06-30 |
Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
SOT226 | plastic, single-ended package (I2PAK); 3 terminals; 2.54 mm pitch; 11 mm x 10 mm x 4.3 mm body | Package information | 2020-04-21 |
BUK7E1R8-40E | BUK7E1R8-40E Spice model | SPICE model | 2012-10-05 |
TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2024-08-09 |
BUK7E1R8-40E_RC_Thermal_Model | BUK7E1R8-40E Thermal design model | Thermal design | 2021-01-18 |
BUK7E1R8-40E | BUK7E1R8-40E Thermal model | Thermal model | 2012-10-08 |
支持
如果您需要设计/技术支持,请告知我们并填写 应答表 我们会尽快回复您。
模型
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
BUK7E1R8-40E | BUK7E1R8-40E Spice model | SPICE model | 2012-10-05 |
BUK7E1R8-40E_RC_Thermal_Model | BUK7E1R8-40E Thermal design model | Thermal design | 2021-01-18 |
BUK7E1R8-40E | BUK7E1R8-40E Thermal model | Thermal model | 2012-10-08 |
SOT226 | 3D model for products with SOT226 package | Design support | 2017-06-30 |
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.