双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

IP3053CX10

IP3053CX10 End of life

Integrated 2, 4, 6, 8-channel passive EMI-filter network

IP3053CX5, IP3053CX10, IP3053CX15 and IP3053CX20 is a 2, 4, 6 and 8-channel LC low-pass filter array family which is designed to provide filtering of undesired RF signals on the I/O ports of portable communication or computing devices. In addition, IP3053CX5, IP3053CX10, IP3053CX15 and IP3053CX20 incorporates diodes to provide protection to downstream components from ElectroStatic Discharge (ESD) voltages as high as ±8 kV according IEC 61000-4-2 level 4.

The devices are fabricated using monolithic silicon technology and integrate and incorporate up to 8 inductors and up to 16 diodes in a 0.5 mm pitch Wafer-Level Chip-Scale Package (WLCSP).

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  • 交互式数据手册

产品细节

Features and benefits

  • Pb-free, RoHS compliant and free of halogen and antimony (Dark Green compliant)
  • Integrated 2, 4, 6 and 8-channel π-type LC-filter network
  • 18Ωchannel series resistance; ≤ 45 pF (at 2.5 V DC) channel capacitance
  • Integrated ESD protection withstanding ±8 kV contact discharge
  • WLCSP with 0.5 mm pitch

Applications

  • General purpose ElectroMagnetic Interference (EMI) and Radio Frequency Interference (RFI) filtering and downstream ESD protection for:
  • Cellular and Personal Communication System (PCS) mobile handsets
  • Cordless telephones
  • Wireless data (WAN/LAN) systems

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More information

品质及可靠性免责声明

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Longevity

The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.

交互式数据手册

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册