可订购部件
型号 | 可订购的器件编号 | 订购代码(12NC) | 封装 | 从经销商处购买 |
---|---|---|---|---|
NXS0108PW-Q100 | NXS0108PW-Q100J | 935690989118 | SOT360-1 | 订单产品 |
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Click here for more informationDual supply translating transceiver; open drain; auto direction sensing
The NXS0108-Q100 is an 8-bit, dual supply translating transceiver with auto direction sensing, that enables bidirectional voltage level translation. It features two 8-bit input-output ports (An and Bn), one output enable input (OE) and two supply pins (VCC(A) and VCC(B)). VCC(A) can be supplied at any voltage between 1.2 V and 3.6 V and VCC(B) can be supplied at any voltage between 1.65 V and 5.5 V, making the device suitable for translating between any of the voltage nodes (1.2 V, 1.8 V, 2.5 V, 3.3 V and 5.0 V). Pins An and OE are referenced to VCC(A) and pins Bn are referenced to VCC(B). A LOW level at pin OE causes the outputs to assume a high-impedance OFF-state. This device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing the damaging backflow current through the device when it is powered down.
This product has been qualified to the Automotive Electronics Council (AEC) standard Q100 (Grade 1) and is suitable for use in automotive applications.
Automotive product qualification in accordance with AEC-Q100 (Grade 1)
Specified from -40 °C to +85 °C and from -40 °C to +125 °C
Wide supply voltage range:
VCC(A): 1.2 V to 3.6 V and VCC(B): 1.65 V to 5.5 V
Maximum data rates:
Push-pull: 110 Mbps
IOFF circuitry provides partial Power-down mode operation
Inputs accept voltages up to 5.5 V
ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2500 V for A port
HBM: ANSI/ESDA/JEDEC JS-001 class 3B exceeds 15000 V for B port
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1500 V
Latch-up performance exceeds 100 mA per JESD 78B Class II
DHVQFN package with Side-Wettable Flanks enabling Automated Optical Inspection (AOI) of solder joints
型号 | VCC(A) (V) | VCC(B) (V) | Logic switching levels | Output drive capability (mA) | tpd (ns) | Nr of bits | Power dissipation considerations | Tamb (°C) | Package name |
---|---|---|---|---|---|---|---|---|---|
NXS0108PW-Q100 | 1.65 - 3.6 | 2.3 - 5.5 | CMOS | - 0.02 / 1.0 | 6.3 | 8 | low | -40~125 | TSSOP20 |
型号 | 可订购的器件编号,(订购码(12NC)) | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
---|---|---|---|---|---|---|---|
NXS0108PW-Q100 | NXS0108PW-Q100J (935690989118) |
Active | NXS0108 |
TSSOP20 (SOT360-1) |
SOT360-1 |
SSOP-TSSOP-VSO-WAVE
|
SOT360-1_118 |
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
NXS0108_Q100 | Dual supply translating transceiver; open drain; auto direction sensing | Data sheet | 2024-07-31 |
AN90014 | Pin FMEA for NXS family | Application note | 2020-03-25 |
SOT360-1 | 3D model for products with SOT360-1 package | Design support | 2020-01-22 |
nxs0108 | NXS0108 IBIS model | IBIS model | 2020-11-05 |
Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
TSSOP20_SOT360-1_mk | plastic, thin shrink small outline package; 20 leads; 0.65 mm pitch; 6.5 mm x 4.4 mm x 1.1 mm body | Marcom graphics | 2017-01-28 |
SOT360-1 | plastic, thin shrink small outline package; 20 leads; 0.65 mm pitch; 6.5 mm x 4.4 mm x 1.1 mm body | Package information | 2022-06-21 |
SOT360-1_118 | TSSOP20; Reel pack for SMD, 13''; Q1/T1 product orientation | Packing information | 2023-08-30 |
NXS0108PW-Q100_Nexperia_Product_Reliability | NXS0108PW-Q100 Nexperia Product Reliability | Quality document | 2024-06-16 |
SSOP-TSSOP-VSO-WAVE | Footprint for wave soldering | Wave soldering | 2009-10-08 |
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型号 | Orderable part number | Ordering code (12NC) | 状态 | 包装 | Packing Quantity | 在线购买 |
---|---|---|---|---|---|---|
NXS0108PW-Q100 | NXS0108PW-Q100J | 935690989118 | Active | SOT360-1_118 | 2,500 | 订单产品 |
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The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.