双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)
PDI1284P11DGG

PDI1284P11DGG End of life

3.3 V parallel interface transceiver/buffer

The PDI1284P11 parallel interface chip is designed to provide an asynchronous, 8-bit, bidirectional, parallel interface for personal computers. The PDI1284P11 includes all 19 signal lines defined by the IEEE 1284 interface specification for Byte, Nibble, EPP, and ECP modes. The PDI1284P11 is designed for hosts or peripherals operating at 3.3 V to interface 3.3 V or 5.0 V devices.

The eight transceiver pairs (A/B 1 to 8) allow data transmission from the A-bus to the B-bus, or from the B-bus to the A-bus, depending on the state of the direction pin DIR.

The B-bus and the Y9 to Y13 lines have either totem pole or resistor pull-up outputs, depending on the state of the high drive enable pin HD. The A-bus has only totem pole style outputs. All inputs are TTL compatible with at least 400 mV of input hysteresis at VCC = 3.3 V.
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  • 交互式数据手册

产品细节

Features and benefits

  • Asynchronous operation

  • 8-bit transceivers

  • Six additional buffer/driver lines peripheral to cable

  • Five additional control lines from cable

  • 5 V tolerant

  • ESD protection:

    • HBM JESD22-A114E exceeds 2000 V

    • MM JESD22-A115-A exceeds 200 V

  • Latch-up current protection exceeds 500 mA per JEDEC Std 19

  • Input hysteresis

  • Low-noise operation

  • IEEE 1284 compliant level 1 and 2

  • Overvoltage protection on B/Y side for off-state

  • A side 3-state option

  • B side active or resistive pull-up option

  • Cable side supply voltage for 5 V or 3 V operation

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More information

品质及可靠性免责声明

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Longevity

The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.

交互式数据手册

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册