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Click here for more informationPEMB18
PNP/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ
PNP/PNP双配电阻晶体管(RET),采用表面贴装器件(SMD)塑料封装。
Alternatives
Features and benefits
- 100 mA的输出电流能力
- 内置偏置电阻
- 电路设计更为简化
- 元器件数量更少
- 贴片成本更低
- 符合AEC-Q101标准
Applications
- 低电流外设驱动器
- 控制IC输入
- 可在数字应用中替代通用晶体管
参数类型
型号 | Package version | Package name | Size (mm) | IO [max] (mA) | R1 (typ) (kΩ) | R2 (typ) (kΩ) | Channel type | Ptot (mW) | VCEO (V) |
---|---|---|---|---|---|---|---|---|---|
PEMB18 | SOT666 | SOT666 | 1.6 x 1.2 x 0.55 | 100 | 4.7 | 10 | PNP/PNP | 300 | 50 |
封装
下表中的所有产品型号已停产。参见表 停产信息 了解更多信息。
型号 | 可订购的器件编号,(订购码(12NC)) | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
---|---|---|---|---|---|---|---|
PEMB18 | PEMB18,115 (934058914115) |
Obsolete | 6A |
(SOT666) |
SOT666 |
REFLOW_BG-BD-1
|
SOT666_115 |
Series
文档 (10)
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
PEMB18_PUMB18 | PNP/PNP resistor-equipped transistors; R1 = 4.7 kOhm, R2 = 10 kOhm | Data sheet | 2012-01-30 |
SOT666 | 3D model for products with SOT666 package | Design support | 2019-01-22 |
Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
SOT666_mk | plastic, surface-mounted package; 6 leads; 1 mm pitch; 1.6 mm x 1.2 mm x 0.55 mm body | Marcom graphics | 2017-01-28 |
LSYMTRA | Letter Symbols - Transistors; General | Other type | 1999-05-06 |
SOT666 | plastic, surface-mounted package; 6 leads; 0.5 mm pitch; 1.6 mm x 1.2 mm x 0.55 mm body | Package information | 2022-06-01 |
PEMB18_Nexperia_Product_Quality | PEMB18 Nexperia Product Quality | Quality document | 2019-05-20 |
PEMB18_Nexperia_Product_Reliability | PEMB18 Nexperia Product Reliability | Quality document | 2021-03-19 |
REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
PEMB18 | PEMB18 SPICE model | SPICE model | 2024-03-26 |
支持
如果您需要设计/技术支持,请告知我们并填写 应答表 我们会尽快回复您。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.