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Click here for more informationPHX20N06T
N-channel TrenchMOS standard level FET
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
Features and benefits
- No additional electrical insulation required due to isolated package
- Suitable for standard level gate drive sources
Applications
- DC motor control
- DC-to-DC convertors
- General purpose power switching
- Synchronized rectification
封装
下表中的所有产品型号均已停产 。
| 型号 | 可订购的器件编号，（订购码(12NC)） | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
|---|---|---|---|---|---|---|---|
| PHX20N06T | PHX20N06T,127 (934057814127) |
Obsolete | PHX 20N06T P**XXYY AZ Batch No. | no package information | |||
文档 (1)
| 文件名称 | 标题 | 类型 | 日期 |
|---|---|---|---|
| AN11160 | Designing RC Snubbers | Application note | 2024-10-21 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
No documents available
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.