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Click here for more informationPSMN7R6-60XS
N-channel 60 V 7.8 mΩ standard level MOSFET in TO220F (SOT186A)
Standard level N-channel MOSFET in a TO-220F (SOT186A) package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment.
Features and benefits
- High efficiency due to low switching and conduction losses
- Isolated TO220F package
- Suitable for standard level gate drive
Applications
- AC-to-DC power supply equipment
- Synchronous rectification
- Motor control
封装
下表中的所有产品型号均已停产 。
| 型号 | 可订购的器件编号，（订购码(12NC)） | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
|---|---|---|---|---|---|---|---|
| PSMN7R6-60XS | PSMN7R6-60XSQ (934069171127) |
Obsolete | PSMN7R6 60XS P**XXYY AZ Batch No | no package information | |||
环境信息
下表中的所有产品型号均已停产 。
| 型号 | 可订购的器件编号 | 化学成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| PSMN7R6-60XS | PSMN7R6-60XSQ | PSMN7R6-60XS |
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文档 (5)
| 文件名称 | 标题 | 类型 | 日期 |
|---|---|---|---|
| AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
| AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
| AN11261 | RC Thermal Models | Application note | 2021-03-18 |
| AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
| TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2024-08-09 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
No documents available
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.