主要特性和优势
- 一个晶体管和两个电阻集成在一个封装中
- 降低处理和库存成本
- 广泛的100 mA产品范围
- 减少电路板空间
- 500 mA产品组合
- 缩短装配时间
- 采用SOT363/457封装的完整双RET系列
- 简化设计流程
- 符合AEC-Q101标准
- 减少焊点,提升系统可靠性
关键应用
- 数字应用
- 仪表盘
- 发动机控制单元
参数搜索
RETs 500 mA single/double
数据加载中,请稍候...
参数搜索不可用。
产品
型号 | 描述 | 状态 | 快速访问 |
---|---|---|---|
PDTB1xxxU series-[1484236593326] | 500 mA, 50 V PNP resistor-equipped transistors | ACT |
|
PDTB113EU | 50 V, 500 mA PNP resistor-equipped transistor | Production | |
PDTB123EU | 50 V, 500 mA PNP resistor-equipped transistor | Production | |
PDTB123YU | 50 V, 500 mA PNP resistor-equipped transistor | Production | |
PDTB143EU | 50 V, 500 mA PNP resistor-equipped transistor | Production | |
PDTB143XU | 50 V, 500 mA PNP resistor-equipped transistor | Production | |
PDTD1xxxT series | 500 mA, 50 V NPN resistor-equipped transistors | ACT |
|
PDTD114ET | 50 V, 500 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ | Production | |
PDTD143ET-Q | 500 mA, 50 V NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ | Production | |
PDTD143XT | 50 V, 500 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 10 kΩ | Production | |
PDTD1xxxU series | 500 mA, 50 V NPN resistor-equipped transistors | ACT |
|
PDTD113EU | 50 V, 500 mA NPN resistor-equipped transistor | Production | |
PDTD113ZU | 50 V, 500 mA NPN resistor-equipped transistor | Production | |
PDTD114EU-Q | 50 V, 500 mA NPN resistor-equipped transistor | Production | |
PDTD123EU | 50 V, 500 mA NPN resistor-equipped transistor | Production | |
PDTD123YU | 50 V, 500 mA NPN resistor-equipped transistor | Production | |
PDTD143EU | 50 V, 500 mA NPN resistor-equipped transistor | Production | |
PDTD143XU | 50 V, 500 mA NPN resistor-equipped transistor | Production | |
PDTD123YK | NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 10 kOhm | EndOfLife | |
PIMC31-Q | 500 mA, 50 V NPN/PNP double resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ | Production | |
PDTB114EQA | 50 V, 500 mA PNP resistor-equipped transistors | Production | |
PDTB113ZQA | 50 V, 500 mA PNP resistor-equipped transistors | Production | |
PDTD123ET | NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm | Production | |
PDTB113EQA | 50 V, 500 mA PNP resistor-equipped transistors | Production | |
PDTB123EQA | 50 V, 500 mA PNP resistor-equipped transistors | Production | |
PDTB123YQA | 50 V, 500 mA PNP resistor-equipped transistors | Production | |
PDTB143XQA | 50 V, 500 mA PNP resistor-equipped transistors | Production | |
PDTD123TT | NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kOhm, R2 = open | Production | |
PDTB143EQA | 50 V, 500 mA PNP resistor-equipped transistors | Production | |
PIMN31 | 500 mA, 50 V NPN/NPN double resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhm | Production | |
PDTD113ZT-Q | NPN 500 mA, 50 V resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ | Production | |
PIMN32-Q | 50 V, 500 mA NPN/NPN Resistor-Equipped double Transistor (RET); R1 = 2.2 kΩ, R2 = 10 kΩ | Production | |
PIMP31-Q | 50 V, 500 mA PNP/PNP Resistor-Equipped double Transistor (RET); R1 = 1 kΩ, R2 = 10 kΩ | Production | |
PDTD123YT-Q | 50 V, 500 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ | Production | |
PDTD114EU-Q | 50 V, 500 mA NPN resistor-equipped transistor | Production | |
PDTD143ET-Q | 500 mA, 50 V NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ | Production | |
PIMC32-Q | 50 V, 500 mA NPN/PNP Resistor-Equipped double Transistor (RET); R1 = 2.2 kΩ, R2 = 10 kΩ | Production | |
PIMP32PAS-Q | 50 V, 500 mA PNP/PNP Resistor-Equipped double Transistor; R1 = 2.2 kΩ, R2 = 10 kΩ | Production | |
PIMP32-Q | 50 V, 500 mA PNP/PNP Resistor-Equipped double Transistor (RET); R1 = 2.2 kΩ, R2 = 10 kΩ | Production | |
PIMP31PAS-Q | 50 V, 500 mA PNP/PNP Resistor-Equipped double Transistor; R1 = 1 kΩ, R2 = 10 kΩ | Production | |
PIMN32PAS-Q | 50 V, 500 mA NPN/NPN Resistor-Equipped double Transistor; R1 = 2.2 kΩ, R2 = 10 kΩ | Production | |
PIMN31PAS-Q | 50 V, 500 mA NPN/NPN Resistor-Equipped double Transistor; R1 = 1 kΩ, R2 = 10 kΩ | Production | |
PIMC32PAS-Q | 50 V, 500 mA NPN/PNP Resistor-Equipped double Transistor; R1 = 2.2 kΩ, R2 = 10 kΩ | Production | |
PDTB114EU-Q | 50 V, 500 mA PNP resistor-equipped transistor | Production | |
PIMC31PAS-Q | 50 V, 500 mA NPN/PNP Resistor-Equipped double Transistor; R1 = 1 kΩ, R2 = 10 kΩ | Production | |
PDTB113EU | 50 V, 500 mA PNP resistor-equipped transistor | Production | |
PDTB123EU | 50 V, 500 mA PNP resistor-equipped transistor | Production | |
PDTB143EU | 50 V, 500 mA PNP resistor-equipped transistor | Production | |
PDTB123YU | 50 V, 500 mA PNP resistor-equipped transistor | Production | |
PDTB114ET | 50 V, 500 mA PNP resistor-equipped transistor | Production | |
PDTB143XU | 50 V, 500 mA PNP resistor-equipped transistor | Production | |
PDTD113EU | 50 V, 500 mA NPN resistor-equipped transistor | Production | |
PDTB143XT | 50 V, 500 mA PNP resistor-equipped transistor | Production | |
PDTD114ET | 50 V, 500 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ | Production | |
PDTD123YU | 50 V, 500 mA NPN resistor-equipped transistor | Production | |
PDTD123EU | 50 V, 500 mA NPN resistor-equipped transistor | Production | |
PDTD113ZU | 50 V, 500 mA NPN resistor-equipped transistor | Production | |
PDTD143XT | 50 V, 500 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 10 kΩ | Production | |
PDTD143EU | 50 V, 500 mA NPN resistor-equipped transistor | Production | |
PDTD123ET-Q | 50 V, 500 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ | Production | |
PDTD143XU | 50 V, 500 mA NPN resistor-equipped transistor | Production |
Visit our documentation center for all documentation
Marcom graphics (1) |
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文件名称 | 标题 | 类型 | 日期 |
SOT23_mk.png | plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body | Marcom graphics | 2017-01-28 |
Selection guide (1) |
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文件名称 | 标题 | 类型 | 日期 |
Nexperia_Selection_guide_2023.pdf | Nexperia Selection Guide 2023 | Selection guide | 2023-05-10 |