双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

PESD24VL2BT

Low capacitance double bidirectional ESD protection diode in SOT23

Low capacitance double bidirectional ElectroStatic Discharge (ESD) protection diode in a small SOT23 Surface-Mounted Device (SMD) plastic package, designed to protect two signal lines from the damage caused by ESD and other transients.

不建议用在新设计中(NRND)。

Features and benefits

  • ESD protection of two lines

  • Max. peak pulse power: PPPM = 200 W

  • Low clamping voltage: VCL = 70 V

  • Small SMD plastic package

  • Ultra low leakage current: IRM = 1 nA

  • ESD protection up to 23 kV

  • IEC 61000-4-2, level 4 (ESD)

  • IEC 61000-4-5 (surge); IPPM = 3 A

  • AEC-Q101 qualified

Application information

  • Computers and peripherals

  • Audio and video equipment

  • Cellular handsets and accessories

  • Communication systems

  • Portable electronics

  • SIM card protection