Features and benefits
- High performance (>99% efficiency)
- Low dynamic characteristics
- Lowest WBG losses in reverse conduction
- Leading soft-switching performance
- Easy to drive, 0 to 12 V gate drive
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GaN quality & reliability
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TO-247 GaN FETs

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Products
GaN FETs
型号 | 描述 | 状态 | 快速访问 |
---|---|---|---|
GAN041-650WSB | 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package | Production | |
GAN063-650WSA | 650 V, 50 mΩ Gallium Nitride (GaN) FET | Production |
Documentation
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
TO-247_SOT429_mk | plastic, single-ended through-hole package; 3 leads; 5.45 mm pitch; 20.45 mm x 15.6 mm x 4.95 mm body | Marcom graphics | 2019-02-19 |
AN90005 | Understanding Power GaN FET data sheet parameters | Application note | 2020-06-08 |
AN90006 | Circuit design and PCB layout recommendations for GaN FET half bridges | Application note | 2019-11-15 |
Nexperia_document_brochure_GaN_2021 | Nexperia_document_brochure_GaN_2021 | Brochure | 2021-05-18 |
TN90004 | An insight into Nexperia Power GaN technology – Applications, quality, reliability and scalability | Technical note | 2020-07-21 |
nexperia_whitepaper_gan_need_for_efficient_conversion | White paper: Power GaN technology: the need for efficient power conversion | White paper | 2020-07-23 |
nexperia_whitepaper_gan_need_for_efficient_conversion_CHN | 白皮书: 功率GaN技术: 高效功率转换的需求 | White paper | 2020-08-17 |
Nexperia_document_book_MOSFETGaNFETApplicationHandbook_2020 | MOSFET & GaN FET Application Handbook | User manual | 2020-11-05 |
nexperia_whitepaper_gan_need_for_efficient_conversion_Japanese | Whitepaper: GaN need for efficient conversion (Japanese) | White paper | 2021-05-20 |
AN90030 | Paralleling of Nexperia GaN FETs in half-bridge topology | Application note | 2021-10-19 |
Nexperia_Selection_guide_2022 | Nexperia Selection Guide 2022 | Selection guide | 2022-01-05 |
Datasheets (2)
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
GAN041-650WSB | 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package | Data sheet | 2021-01-12 |
GAN063-650WSA | 650 V, 50 mOhm Gallium Nitride (GaN) FET | Data sheet | 2020-07-31 |