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Low voltage e-mode GaN FETs
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产品
| 型号 | 描述 | 状态 | 快速访问 |
|---|---|---|---|
| GAN3R2-100CBE | 100 V, 3.2 mOhm Gallium Nitride (GaN) FET in a 3.5 mm x 2.13 mm Wafer Level Chip-Scale Package (WLCSP) | Production | |
| GAN7R0-150LBE | 150 V, 7 mOhm Gallium Nitride (GaN) FET in a 2.2 mm x 3.2 mm x 0.774 mm Land Grid Array (LGA) package | Production |
Visit our documentation center for all documentation
Application note (1) |
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|---|---|---|---|
| 文件名称 | 标题 | 类型 | 日期 |
| AN90021 | Power GaN technology: the need for efficient power conversion | Application note | 2020-08-14 |
Leaflet (2) |
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| 文件名称 | 标题 | 类型 | 日期 |
| nexperia_document_leaflet_GaNFETs_2023_CHN | Power GaN FETs leaflet | Leaflet | 2023-10-25 |
| nexperia_document_leaflet_GaNFETs_2023 | Power GaN FETs leaflet | Leaflet | 2023-10-25 |
Marcom graphics (1) |
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| 文件名称 | 标题 | 类型 | 日期 |
| WLCSP8_SOT8072-combi_mk | wafer level chip-scale package; 8 solder bars; body: 3.5 x 2.13 x 0.429 mm | Marcom graphics | 2023-04-20 |
White paper (3) |
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| 文件名称 | 标题 | 类型 | 日期 |
| nexperia_whitepaper_gan_need_for_efficient_conversion_Japanese | Whitepaper: GaN need for efficient conversion (Japanese) | White paper | 2021-05-20 |
| nexperia_whitepaper_gan_need_for_efficient_conversion_CHN | 白皮书: 功率GaN技术： 高效功率转换的需求 | White paper | 2020-08-17 |
| nexperia_whitepaper_gan_need_for_efficient_conversion | White paper: Power GaN technology: the need for efficient power conversion | White paper | 2020-07-23 |