可订购部件
| 型号 | 可订购的器件编号 | 订购代码(12NC) | 封装 | 从经销商处购买 |
|---|---|---|---|---|
| GAN7R0-150LBE | GAN7R0-150LBEZ | 934665900328 | SOT8073-1 | 订单产品 |
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Click here for more informationGAN7R0-150LBE
150 V, 7 mOhm Gallium Nitride (GaN) FET in a 2.2 mm x 3.2 mm x 0.774 mm Land Grid Array (LGA) package
The GAN7R0-150LBE is a general purpose 150 V, 7 mΩ Gallium Nitride (GaN) FET in a Land Grid Array (LGA) package. It is a normally-off e-mode device offering superior performance.
Features and benefits
Enhancement mode - normally-off power switch
Ultra high frequency switching capability
No body diode
Low gate charge, low output charge
Qualified for standard applications
ESD protection
RoHS, Pb-free, REACH-compliant
High efficiency and high power density
Land Grid Array (LGA) package 2.2 mm x 3.2 mm x 0.774 mm
Applications
High power density and high efficiency power conversion
AC-to-DC converters, (secondary stage)
- High frequency DC-to-DC converters in 48 V systems
400 V to 48 V LLC converters, secondary (rectification) side
Fast battery charging, mobile phone, laptop, tablet and USB type-C chargers
Datacom and telecom (AC-to-DC and DC-to-DC) converters
Motor drives
LiDAR (non-automotive)
Class D audio amplifiers
参数类型
| 型号 | Package version | Package name | Product status | Configuration | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 5 V (mΩ) | Tj [max] (°C) | QGD [typ] (nC) | Ptot [max] (W) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GAN7R0-150LBE | SOT8073-1 | FCLGA3 | Production | e-mode | N | 1 | 150 | 7 | 150 | 1.3 | 28 | 1.1 | N | 865 | 280 | 2023-02-22 |
封装
| 型号 | 可订购的器件编号，（订购码(12NC)） | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
|---|---|---|---|---|---|---|---|
| GAN7R0-150LBE | GAN7R0-150LBEZ (934665900328) |
Active | 7R0ELBE |
FCLGA3 (SOT8073-1) |
SOT8073-1 | SOT8073-1_328 |
文档 (21)
| 文件名称 | 标题 | 类型 | 日期 |
|---|---|---|---|
| GAN7R0-150LBE | 150 V, 7 mOhm Gallium Nitride (GaN) FET in a 2.2 mm x 3.2 mm x 0.774 mm Land Grid Array (LGA) package | Data sheet | 2023-04-24 |
| AN90004 | Probing considerations for fast switching applications | Application note | 2019-11-15 |
| AN90005 | Understanding Power GaN FET data sheet parameters | Application note | 2020-06-08 |
| AN90006 | Circuit design and PCB layout recommendations for GaN FET half bridges | Application note | 2019-11-15 |
| AN90021 | Power GaN technology: the need for efficient power conversion | Application note | 2020-08-14 |
| AN90041 | Gate drive circuit design for Nexperia 650 V Enhancement mode (e-mode) GaN FETs | Application note | 2023-05-09 |
| SOT8073-1 | 3D model for products with SOT8073-1 package | Design support | 2023-04-13 |
| 2023_0001_NEX_150_Leaflet_update_Power_GaN_FETs | Leaflet Power GaN FETs | Leaflet | 2023-10-24 |
| nexperia_document_leaflet_GaN_FETs_2023 | Power GaN FETs leaflet | Leaflet | 2025-01-10 |
| SOT8073-1 | flip chip land gid array package; no leads; body: 3.2 x 2.2 x 0.774 mm, 3-pad | Package information | 2023-03-21 |
| SOT8073-1_328 | FCLGA; Reel dry pack for SMD, 7"; Q2/T3 product orientation | Packing information | 2023-04-18 |
| GAN7R0-150LBE | GAN7R0-150LBE SPICE model | SPICE model | 2023-04-12 |
| TN90004 | An insight into Nexperia Power GaN technology – Applications, quality, reliability and scalability | Technical note | 2020-07-21 |
| CauerModel_GAN7R0-150LBE | Cauer model GAN7R0-150LBE | Thermal model | 2023-04-12 |
| FosterModel_GAN7R0-150LBE | Foster model GAN7R0-150LBE | Thermal model | 2023-04-12 |
| GAN7R0-150LBE | GAN7R0-150LBE RC thermal model | Thermal model | 2023-04-12 |
| GAN7R0-150LBE_Cauer | GAN7R0-150LBE Cauer model | Thermal model | 2023-04-12 |
| GAN7R0-150LBE_Foster | GAN7R0-150LBE Foster model | Thermal model | 2023-04-12 |
| nexperia_whitepaper_gan_need_for_efficient_conversion | White paper: Power GaN technology: the need for efficient power conversion | White paper | 2020-07-23 |
| nexperia_whitepaper_gan_need_for_efficient_conversion_CHN | 白皮书: 功率GaN技术： 高效功率转换的需求 | White paper | 2020-08-17 |
| nexperia_whitepaper_gan_need_for_efficient_conversion_Japanese | Whitepaper: GaN need for efficient conversion (Japanese) | White paper | 2021-05-20 |
支持
如果您需要设计/技术支持，请告知我们并填写 应答表 我们会尽快回复您。
模型
| 文件名称 | 标题 | 类型 | 日期 |
|---|---|---|---|
| SOT8073-1 | 3D model for products with SOT8073-1 package | Design support | 2023-04-13 |
| GAN7R0-150LBE | GAN7R0-150LBE SPICE model | SPICE model | 2023-04-12 |
| CauerModel_GAN7R0-150LBE | Cauer model GAN7R0-150LBE | Thermal model | 2023-04-12 |
| FosterModel_GAN7R0-150LBE | Foster model GAN7R0-150LBE | Thermal model | 2023-04-12 |
| GAN7R0-150LBE | GAN7R0-150LBE RC thermal model | Thermal model | 2023-04-12 |
| GAN7R0-150LBE_Cauer | GAN7R0-150LBE Cauer model | Thermal model | 2023-04-12 |
| GAN7R0-150LBE_Foster | GAN7R0-150LBE Foster model | Thermal model | 2023-04-12 |
订购、定价与供货
| 型号 | Orderable part number | Ordering code (12NC) | 状态 | 包装 | Packing Quantity | 在线购买 |
|---|---|---|---|---|---|---|
| GAN7R0-150LBE | GAN7R0-150LBEZ | 934665900328 | Active | SOT8073-1_328 | 2,500 | 订单产品 |
样品
安世半导体客户可通过我们的销售机构或直接通过在线样品商店订购样品： https://extranet.nexperia.com.
样品订单通常需要2-4天寄送时间。
如果您尚未取得安世半导体的直接采购帐号，我们的全球与区域经销网络可以协助您取得样品。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
GAN7R0-150LBE
150 V, 7 mOhm Gallium Nitride (GaN) FET in a 2.2 mm x 3.2 mm x 0.774 mm Land Grid Array (LGA) package
从安世半导体购买
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