双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

PSMN4R8-100PSE

N-channel 100 V 5 mΩ standard level MOSFET with improved SOA in TO220 package

Standard level N-channel MOSFET with improved SOA in a TO220 package. Part of Nexperia's "NextPower Live" portfolio, the PSMN4R8-100PSE is robust enough to withstand substantial in-rush and fault condition currents during turn on/off, whilst offering a low RDS(on) characteristic to keep temperatures down and efficiency up in continued use. Ideal for telecommunication systems based on 48 V backplanes / supply rails.

此产品已停产

Features and benefits

  • Enhanced safe operating area (SOA) for superior protection during linear mode operation

  • Very low RDS(on) for low conduction losses

Applications

  • Electronic fuse

  • Hot-swap / Soft-start

  • Uninterruptible power supplies

  • Motor control

参数类型

型号 Package version Package name Product status Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 10 V (nC) Ptot [max] (W) Qr [typ] (nC) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
PSMN4R8-100PSE SOT78 TO-220AB End of life N 1 100 5 175 120 59 196 405 227 3 N 10665 674 2014-05-16

封装

下表中的所有产品型号均已停产 。

型号 可订购的器件编号，（订购码(12NC)） 状态 标示 封装 外形图 回流焊/波峰焊 包装
PSMN4R8-100PSE PSMN4R8-100PSEQ
(934068633127)		 Withdrawn / End-of-life PSMN4R8 100PSE SOT78
TO-220AB
(SOT78) 		SOT78 SOT78_127

环境信息

下表中的所有产品型号均已停产 。

型号 可订购的器件编号 化学成分 RoHS RHF指示符
PSMN4R8-100PSE PSMN4R8-100PSEQ PSMN4R8-100PSE rohs rhf
品质及可靠性免责声明

文档 (18)

文件名称 标题 类型 日期
PSMN4R8-100PSE N-channel 100 V, 5 mΩ standard level MOSFET with improved SOA in TO220 package Data sheet 2018-04-02
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2025-03-20
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
AN11172 Mounting instructions for SOT78 (TO-220AB); SOT186A (TO-220F) Application note 2021-05-21
AN90063 Questions about package outline drawings Application note 2025-03-12
SOT78 3D model for products with SOT78 package Design support 2017-06-30
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOT78 plastic, single-ended package (heatsink mounted, 1 mounting hole); 3 leads; 2.54 mm pitch; 15.6 mm x 10 mm x 4.4 mm body Package information 2020-04-21
Reliability_information_template_t6_sot78 Reliability Information T6 SOT78 Quality document 2023-03-24
T6_SOT78_PSMN4R8-100PSE_Nexperia_Quality_document PSMN4R8-100PSE Quality document Quality document 2023-03-23
PSMN4R8-100PSE_Spice PSMN4R8-100PSE SPICE model SPICE model 2014-11-12
TN00008 Power MOSFET frequently asked questions and answers Technical note 2024-08-09
PSMN4R8-100PSE_RCthermal PSMN4R8-100PSE Thermal design model Thermal design 2014-11-12
PSMN4R8-100PSE_FlowTherm PSMN4R8-100PSE Thermal model Thermal model 2014-11-12

支持

如果您需要设计/技术支持，请告知我们并填写 应答表 我们会尽快回复您。


Longevity

The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.


模型

文件名称 标题 类型 日期
PSMN4R8-100PSE_Spice PSMN4R8-100PSE SPICE model SPICE model 2014-11-12
PSMN4R8-100PSE_RCthermal PSMN4R8-100PSE Thermal design model Thermal design 2014-11-12
PSMN4R8-100PSE_FlowTherm PSMN4R8-100PSE Thermal model Thermal model 2014-11-12
SOT78 3D model for products with SOT78 package Design support 2017-06-30

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册