特性
- AEC-Q101 compliant
- Electrostatically robust due to integrated protection diodes
- Low conduction losses due to low on-state resistance
- Reduced component count due to integrated current sensor
- Suitable for standard level gate drive sources
目标应用
- Electrical Power Assisted Steering (EPAS)
- Variable Valve Timing for engines
参数类型
型号 | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | ID [max] (A) | QGD [typ] (nC) | Ptot [max] (W) | Automotive qualified | Date |
---|---|---|---|---|---|---|---|---|---|---|---|---|
BUK7108-40AIE NRND | SOT426 | D2PAK | End of life | N | 1 | 40 | 8 | 117 | 34 | 221 | Y | 2011-01-04 |
PCB Symbol, Footprint and 3D Model
Model Name | 描述 |
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Package
下表中的所有产品型号已停产。参见表 停产信息 了解更多信息。
型号 | 可订购的器件编号,(订购码(12NC)) | 状态 | 标示 | 封装 | 尺寸版本 | 回流焊/波峰焊 | 包装 |
---|---|---|---|---|---|---|---|
BUK7108-40AIE NRND | BUK7108-40AIE,118 ( 9340 579 45118 ) | Withdrawn / End-of-life | BUK7108-40AIE | ![]() D2PAK (SOT426) | SOT426 | SOT426_118 |
停产信息
型号 | 可订购的器件编号 | Ordering code | 最后一次购买日期 | 最后一次交货日期 | 替代产品 | 状态 | 备注 |
---|---|---|---|---|---|---|---|
BUK7108-40AIE NRND | BUK7108-40AIE,118 | 934057945118 |
文档 (12)
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
BUK7108-40AIE | N-channel TrenchPLUS standard level FET | Data sheet | 2009-02-17 |
AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2022-06-20 |
AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2020-07-06 |
AN11160 | Designing RC Snubbers | Application note | 2023-02-03 |
AN11156 | Using Power MOSFET Zth Curves | Application note | 2021-01-04 |
AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2017-12-21 |
AN11158_ZH | Understanding power MOSFET data sheet parameters | Application note | 2021-01-04 |
AN11261 | RC Thermal Models | Application note | 2021-03-18 |
AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2023-01-12 |
支持
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PCB Symbol, Footprint and 3D Model
Model Name | 描述 |
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How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.