双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

DFN1010

Applications


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The next generation of small packaging - featuring currents up to 3 A on a 1.1 mm² footprint

The DFN1010 can be used for new designs in space constrained application and replace larger packages in the same RDSon range.



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Package

Package name

Dimension (mm)

Applications


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DFN1010D-3 (SOT1215)

1.1 x 1.0 x 0.37

  • Portable, mobile and automotive

    applications that require small-footprint solutions

  • Power management
  • Charging circuit
  • Power switches (motors, fans and more)
  • Level shifting
  • LED lighting (automotive matrix light and others)


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DFN1010B-6 (SOT1216)

1.1 x 1.0 x 0.37

主要特性和优势

Features and benefits

  • N-channel and P-channel
  • Low RDSon down to 34 mΩ
  • ID up to 3.2 A
  • Low voltage drive (VGS(th) = 0.65 V [typ])
  • Voltage range of 12 to 80 V
  • ESD protection of more than 1 kV

Related package information

Parametric search

DFN1010 MOSFETs
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Products

Automotive qualified products (AEC-Q100/Q101)

型号 描述 状态 快速访问
PMXB360ENEA 80 V, N-channel Trench MOSFET Production

MOSFETs

型号 描述 状态 快速访问
PMXB360ENEA 80 V, N-channel Trench MOSFET Production
PMXB56EN 30 V, N-channel Trench MOSFET Production
PMXB350UPE 20 V, P-channel Trench MOSFET Production
PMXB65ENE 30 V, N-channel Trench MOSFET Production
PMXB120EPE 30 V, P-channel Trench MOSFET Production
NX7002BKXB 60 V, dual N-channel Trench MOSFET Production
PMDXB290UNE 20 V, dual N-channel Trench MOSFET Production
PMCXB1000UE 30 V, complementary N/P-channel Trench MOSFET Production
PMCXB290UE 20 V, complementary N/P-channel Trench MOSFET Production
PMDXB590UPE 20 V, dual P-channel Trench MOSFET Production
PMXB40UNE 12 V, N-channel Trench MOSFET Production
PMXB43UNE 20 V, N-channel Trench MOSFET Production
PMDXB550UNE 30 V, dual N-channel Trench MOSFET Production
PMDXB1200UPE 30 V, dual P-channel Trench MOSFET Production
PMDXB950UPE 20 V, dual P-channel Trench MOSFET Production
PMCXB900UE 20 V, complementary N/P-channel Trench MOSFET Production
PMXB65UPE 12 V, P-channel Trench MOSFET Production
PMXB75UPE 20 V, P-channel Trench MOSFET Production
PMDXB600UNE 20 V, dual N-channel Trench MOSFET Production
PMDXB600UNEL 20 V, dual N-channel Trench MOSFET Production
PMDXB950UPEL 20 V, dual P-channel Trench MOSFET Production
PMCXB900UEL 20 V, complementary N/P-channel Trench MOSFET Production

Documentation

文件名称 标题 类型 日期
DFN1010-6_SOT891_mk.png plastic, extremely thin small outline package; 6 terminals; 0.55 mm pitch; 1 mm x 1 mm x 0.5 mm body Marcom graphics 2017-01-28
vp_1400573678841.zip DFN1010 Value proposition 2017-04-06
Nexperia_package_poster.pdf Nexperia package poster Leaflet 2020-05-15
AN90023.pdf Thermal performance of DFN packages Application note 2020-11-23
Nexperia_Selection_guide_2023.pdf Nexperia Selection Guide 2023 Selection guide 2023-05-10

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