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SOT883

SOT883

plastic, leadless ultra small package; 3 terminals; 0.35 mm pitch; 1 mm x 0.6 mm x 0.48 mm body

外形图

封装版本 封装名称 封装说明 参考 发行日期
SOT883 DFN1006-3 plastic, leadless ultra small package; 3 terminals; 0.35 mm pitch; 1 mm x 0.6 mm x 0.48 mm body SC-101 (EIAJ) 2003-04-03

相关文档

文件名称 标题 类型 日期
SOT883 3D model for products with SOT883 package Design support 2020-01-22
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
DFN1006-3_SOT883_mk plastic, leadless ultra small package; 3 terminals; 0.65 mm pitch; 1 mm x 0.6 mm x 0.48 mm body Marcom graphics 2017-01-28
SOT883 plastic, leadless ultra small package; 3 terminals; 0.35 mm pitch; 1 mm x 0.6 mm x 0.48 mm body Package information 2022-05-20
SOT883_305 DFN1006-3; Reel pack for SMD, 7"; Q3/T4 product orientation Packing information 2020-04-21
SOT883_315 DFN1006-3; Reel pack for SMD, 7"; Q3/T4 product orientation Packing information 2021-01-27
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06

采用此封装的产品

Automotive qualified products (AEC-Q100/Q101)

型号 描述 快速访问
PDTA124EM PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 22 kΩ
PDTA113ZM PNP resistor-equipped transistors; R1 = 1 kOhm, R2 = 10 kOhm
PDTC123YM NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ
PDTC144WM NPN resistor-equipped transistors; R1 = 47 kOhm, R2 = 22 kOhm
PDTC124EM 50 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ
PDTC123EM NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm
BC846BM 65 V, 100 mA NPN general-purpose transistor
BC857CM 45 V, 100 mA PNP general-purpose transistor
2PC4617RM NPN general purpose transistors
BC856BM 60 V, 100 mA PNP general-purpose transistor
PESD5V0X2UM-Q Ultra low capacitance unidirectional double ESD protection diode
PBSS2540M 40 V, 0.5 A NPN low VCEsat (BISS) transistor
PESD3V3L2UM Low capacitance double ESD protection diode
PDTA114TM PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = open
PDTC144TM NPN resistor-equipped transistors; R1 = 47 kOhm, R2 = open
PDTC143EM 50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7  kΩ
BC857BM 45 V, 100 mA PNP general-purpose transistor
BC857AM 45 V, 100 mA PNP general-purpose transistor
PBSS3540M 40 V, 0.5 A PNP low VCEsat (BISS) transistor
PESD5V0L2UM Low capacitance double ESD protection diode
PDTC123TM NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = open
PDTC143ZM 50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 47  kΩ
PESD5V0V2BM Very low capacitance bidirectional ESD protection diodes
2N7002AKM-Q 60 V, N-channel Trench MOSFET
PDTC144VM NPN resistor-equipped transistors; R1 = 47 kOhm, R2 = 10 kOhm
PDTA123EM PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ
BAT54CM Schottky barrier double diode
PDTA114YM PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ
PDTA114EM 50 V, 100 mA PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ
PDTC124TM NPN resistor-equipped transistors; R1 = 22 kOhm, R2 = open
PDTC124XM NPN resistor-equipped transistors; R1 = 22 kOhm, R2 = 47 kOhm
BAV170M Dual common cathode low-leakage diode
PDTC143TM NPN resistor-equipped transistors; R1 = 4.7 kOhm, R2 = open
PDTC115TM NPN resistor-equipped transistors; R1 = 100 kOhm, R2 = open
PDTA113EM PNP resistor-equipped transistors; R1 = 1 kOhm, R2 = 1 kOhm
BSS138AKM-Q 60 V, N-channel Trench MOSFET
PMBT3906M 40 V, 200 mA PNP switching transistor
PMBT2907AM 60 V, 600 mA PNP switching transistor
PESD5V0U2BM-Q Ultra low capacitance bidirectional double ESD protection array
BSS84AKM 50 V, 230 mA P-channel Trench MOSFET
PDTC143XM NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ
BAW56M High-speed switching diode
PESD5V0X2UAM-Q Ultra low capacitance unidirectional double ESD protection diode
PDTA115TM PNP resistor-equipped transistors; R1 = 100 kOhm, R2 = open
PDTA123JM PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ
PDTC123JM 50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ
PDTC144EM 50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ

Bipolar transistors

型号 描述 快速访问
PDTA124EM PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 22 kΩ
PDTA115EM PNP resistor-equipped transistor; R1 = 100 kΩ, R2 = 100 kΩ
PDTA113ZM PNP resistor-equipped transistors; R1 = 1 kOhm, R2 = 10 kOhm
PDTC123YM NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ
PDTC144WM NPN resistor-equipped transistors; R1 = 47 kOhm, R2 = 22 kOhm
PDTA124TM PNP resistor-equipped transistors; R1 = 22 kOhm, R2 = open
PDTA144EM PNP resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ
PDTC124EM 50 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ
PDTC114YM 50 V, 100 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 47 kΩ
PDTC115EM NPN resistor-equipped transistors; R1 = 100 kOhm, R2 = 100 kOhm
PDTA143TM PNP resistor-equipped transistors; R1 = 4.7 kOhm, R2 = open
PDTC123EM NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm
PDTA143EM PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ
BC846BM 65 V, 100 mA NPN general-purpose transistor
BC857CM 45 V, 100 mA PNP general-purpose transistor
2PC4617RM NPN general purpose transistors
PDTA144VM PNP resistor-equipped transistors; R1 = 47 kOhm, R2 = 10 kOhm
BC856BM 60 V, 100 mA PNP general-purpose transistor
PMBT3904M 40 V, 200 mA NPN switching transistor
PBSS2540M 40 V, 0.5 A NPN low VCEsat (BISS) transistor
PDTA114TM PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = open
PDTC144TM NPN resistor-equipped transistors; R1 = 47 kOhm, R2 = open
PDTC143EM 50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7  kΩ
BC857BM 45 V, 100 mA PNP general-purpose transistor
BC857AM 45 V, 100 mA PNP general-purpose transistor
PDTC114EM NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ
PBSS3540M 40 V, 0.5 A PNP low VCEsat (BISS) transistor
PDTC123TM NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = open
PDTA143ZM 50 V, 100 mA PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 47  kΩ
PDTC143ZM 50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 47  kΩ
PDTA143XM PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ
PDTC144VM NPN resistor-equipped transistors; R1 = 47 kOhm, R2 = 10 kOhm
PDTA123EM PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ
PDTA123YM PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 10 kOhm
PBSS3515M 15 V, 0.5 A PNP low VCEsat (BISS) transistor
PDTA114YM PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ
PDTA114EM 50 V, 100 mA PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ
PDTC114TM NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = open
PDTC124TM NPN resistor-equipped transistors; R1 = 22 kOhm, R2 = open
PDTC124XM NPN resistor-equipped transistors; R1 = 22 kOhm, R2 = 47 kOhm
PDTA144WM PNP resistor-equipped transistors; R1 = 47 kOhm, R2 = 22 kOhm
PDTC143TM NPN resistor-equipped transistors; R1 = 4.7 kOhm, R2 = open
PDTC115TM NPN resistor-equipped transistors; R1 = 100 kOhm, R2 = open
PDTA113EM PNP resistor-equipped transistors; R1 = 1 kOhm, R2 = 1 kOhm
PDTA124XM PNP resistor-equipped transistors; R1 = 22 kOhm, R2 = 47 kOhm
PMBT2222AM 40 V, 600 mA NPN switching transistor
PMBT3906M 40 V, 200 mA PNP switching transistor
PMBT2907AM 60 V, 600 mA PNP switching transistor
PDTC143XM NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ
PDTA144TM PNP resistor-equipped transistors; R1 = 47 kOhm, R2 = open
PDTA123TM PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = open
PDTA115TM PNP resistor-equipped transistors; R1 = 100 kOhm, R2 = open
PBSS2515M 15 V, 0.5 A NPN low VCEsat (BISS) transistor
PDTA123JM PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ
PDTC123JM 50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ
PDTC144EM 50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ

Diodes

型号 描述 快速访问
BAV70M High-speed switching diode
BAT54CM Schottky barrier double diode
BAV170M Dual common cathode low-leakage diode
BAW56M High-speed switching diode

ESD protection, TVS, filtering and signal conditioning

型号 描述 快速访问
PESD5V0X2UM-Q Ultra low capacitance unidirectional double ESD protection diode
PESD3V3L2UM Low capacitance double ESD protection diode
PESD5V0U2BM Ultra low capacitance bidirectional double ESD protection array
PESD5V0L2UM Low capacitance double ESD protection diode
PESD5V0V2BM Very low capacitance bidirectional ESD protection diodes
PESD5V0X2UM Ultra low capacitance unidirectional double ESD protection diode
PESD5V0U2BM-Q Ultra low capacitance bidirectional double ESD protection array
PESD5V0X2UAM-Q Ultra low capacitance unidirectional double ESD protection diode
PESD5V0X2UAM Ultra low capacitance unidirectional double ESD protection diode

MOSFETs

型号 描述 快速访问
PMZ200UNE 30 V, N-channel Trench MOSFET
PMZ950UPE 20 V, P-channel Trench MOSFET
PMZ320UPE 30 V, P-channel Trench MOSFET
NX138AKM 60 V, N-channel Trench MOSFET
PMZ950UPEL 20 V, P-channel Trench MOSFET
PMZ350UPE 20 V, P-channel Trench MOSFET
PMZ600UNE 20 V, N-channel Trench MOSFET
PMZ600UNEL 20 V, N-channel Trench MOSFET
PMZ550UNE 30 V, N-channel Trench MOSFET
PMZ290UNE2 20 V, N-channel Trench MOSFET
NX7002BKM 60 V, N-channel Trench MOSFET
NX5008NBKM 50 V, N-channel Trench MOSFET
2N7002AKM-Q 60 V, N-channel Trench MOSFET
NX138BKM 60 V, N-channel Trench MOSFET
PMZ1200UPE 30 V, P-channel Trench MOSFET
PMZ390UNE 30 V, N-channel Trench MOSFET
BSS138AKM-Q 60 V, N-channel Trench MOSFET
PMZ130UNE 20 V, N-channel Trench MOSFET
BSS84AKM 50 V, 230 mA P-channel Trench MOSFET