双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

74HCT374DB

74HCT374DB End of life

Octal D-type flip-flop; positive edge-trigger; 3-state

The 74HC374; 74HCT374 is an octal positive-edge triggered D-type flip-flop with 3-state outputs. The device features a clock (CP) and output enable (OE) inputs. The flip-flops will store the state of their individual D-inputs that meet the set-up and hold time requirements on the LOW-to-HIGH clock (CP) transition. A HIGH on OE causes the outputs to assume a high-impedance OFF-state. Operation of the OE input does not affect the state of the flip-flops. Inputs also include clamp diodes, this enables the use of current limiting resistors to interface inputs to voltages in excess of VCC.

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产品细节

Features and benefits

  • Wide supply voltage range from 2.0 V to 6.0 V

  • CMOS low power dissipation

  • High noise immunity

  • Input levels:

    • For 74HC374: CMOS level

    • For 74HCT374: TTL level

  • Octal bus interface

  • Non-inverting 3-state outputs

  • 8-bit positive, edge-triggered register

  • Common 3-state output enable input

  • Independent register and 3-state buffer operation

  • Complies with JEDEC standards

    • JESD8C (2.7 V to 3.6 V)

    • JESD7A (2.0 V to 6.0 V)

  • Latch-up performance exceeds 100 mA per JESD 78 Class II Level B

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Specified from -40 °C to +85 °C and -40 °C to +125 °C

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Longevity

The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.

交互式数据手册

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册