双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)
74HCT4851D

74HCT4851D Production

8-channel analog multiplexer/demultiplexer with injection-current effect control

The 74HC4851; 74HCT4851 are high-speed Si-gate CMOS devices and are specified in compliance with JEDEC standard no. 7A.

The 74HC4851; 74HCT4851 are 8-channel analog multiplexers/demultiplexers with three digital select inputs (S0 to S2), an active-LOW enable input (E), eight independent inputs/outputs (Y0 to Y7) and a common input/output (Z). The devices feature injection-current effect control, which has excellent value in automotive applications where voltages in excess of the supply voltage are common.

With E LOW, one of the eight switches is selected (low impedance ON-state) by S0 to S2. With E HIGH, all switches are in the high-impedance OFF-state, independent of S0 to S2.

The injection-current effect control allows signals at disabled analog input channels to exceed the supply voltage without affecting the signal of the enabled analog channel. This eliminates the need for external diode/resistor networks typically used to keep the analog channel signals within the supply-voltage range.
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产品细节

Features and benefits

  • Injection-current cross coupling < 1 mV/mA

  • Wide supply voltage range from 2.0 V to 6.0 V for 74HC4851

  • ESD protection:

    • HBM JESD22-A114E exceeds 2000 V

    • CDM JESD22-C101C exceeds 1000 V

  • Latch-up performance exceeds 100 mA per JESD 78 Class II level A

  • Low ON-state resistance:

    • 400 Ω (typical) at VCC = 2.0 V

    • 215 Ω (typical) at VCC = 3.0 V

    • 120 Ω (typical) at VCC = 3.3 V

    • 76 Ω (typical) at VCC = 4.5 V

    • 59 Ω (typical) at VCC = 6.0 V

Applications

  • Analog multiplexing and demultiplexing

  • Digital multiplexing and demultiplexing

  • Signal gating

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交互式数据手册

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册