产品
| 型号 | 描述 | 状态 | 快速访问 |
|---|---|---|---|
| GANB055-650UTX | 650 V, 55 mOhm bidirectional Gallium Nitride (GaN) FET in a TOLT package | Development | |
| GANB110-650UTX | 650 V, 110 mOhm bidirectional Gallium Nitride (GaN) FET in a TOLT package | Development |
Nexperia’s high-voltage bi-directional GaN devices enable true single-stage power conversion for both AC/DC and DC/AC applications. By eliminating intermediate stages and bulky DC‑link components, these solutions simplify system design and reduce component count while improving efficiency and power density. Designed for high-frequency operation and flexible power flow, they open the door to more compact, scalable and efficient next-generation power systems.
| 型号 | 描述 | 状态 | 快速访问 |
|---|---|---|---|
| GANB055-650UTX | 650 V, 55 mOhm bidirectional Gallium Nitride (GaN) FET in a TOLT package | Development | |
| GANB110-650UTX | 650 V, 110 mOhm bidirectional Gallium Nitride (GaN) FET in a TOLT package | Development |