- 产品细节
- 文档
- 支持
- 订购中
- 交互式数据手册
产品细节
Features and benefits
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Simplified driver design as standard level MOSFET gate drivers can be used:
0 V to 12 V drive voltage
Gate threshold voltage VGSth of 4 V
Robust gate oxide with ±20 V VGS rating
High gate threshold voltage of 4 V for gate bounce immunity
Low body diode Vf for reduced losses and simplified dead-time adjustments
Transient over-voltage capability for increased robustness
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CCPAK package technology:
Improved reliability, with reduced Rth(j-mb) for optimal cooling
Lower inductances for lower switching losses and EMI
150 °C maximum junction temperature
High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike traditional QFN packages
Visual (AOI) soldering inspection, no need for expensive x-ray equipment
Easy solder wetting for good mechanical solder joints
Applications
Hard and soft switching converters for industrial and datacom power
Bridgeless totempole PFC
PV and UPS inverters
Servo motor drives
Register once, drag and drop ECAD models into your CAD tool and speed up your design.
More information品质及可靠性免责声明
支持
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Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
样品
作为 Nexperia 的客户,您可以通过我们的销售机构订购样品。
如果您没有 Nexperia 的直接账户,我们的全球和地区分销商网络可为您提供 Nexperia 样品支持。查看官方经销商列表。
交互式数据手册
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
交互式数据手册