双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

PSMN1R4-40YSH

PSMN1R4-40YSH End of life

N-channel 40 V, 1.4 mOhm, 240 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology

240 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications.

  • 产品细节
  • 文档
  • 支持
  • 交互式数据手册

产品细节

Features and benefits

  • 240 A continuous ID(max) rating

  • Avalanche rated, 100% tested at IAS = 190 A

  • Strong SOA (linear-mode) rating

  • NextPower-S3 technology delivers 'superfast switching with soft body-diode recovery'

  • Low QRR, QG and QGD for high system efficiency and low EMI designs

  • Schottky-Plus body-diode with low VSD, low QRR, soft recovery and low IDSS leakage

  • High reliability LFPAK (Power SO8) package, with copper-clip and solder die attach, qualified to 175 °C

  • Exposed leads can be wave soldered, visual solder joint inspection and high quality solder joints

  • Low parasitic inductance and resistance

Applications

  • High-performance synchronous rectification

  • DC-to-DC converters

  • High performance and high efficiency server power supply

  • Brushless DC motor control

  • Battery protection

  • Load-switch and eFuse

  • Inrush management, hotswap

Register once, drag and drop ECAD models into your CAD tool and speed up your design.

More information

品质及可靠性免责声明

支持

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Longevity

The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.

交互式数据手册

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册