双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

74LVC1G86GV-Q100

74LVC1G86GV-Q100 Production

2-input EXCLUSIVE-OR gate

The 74LVC1G86-Q100 provides the 2-input EXCLUSIVE-OR function.

Inputs can be driven from either 3.3 V or 5 V devices. These features allow the use of these devices in a mixed 3.3 V and 5 V environment.

This device is fully specified for partial Power-down applications using IOFF. The IOFF circuitry disables the output, preventing the damaging backflow current through the device when it is powered down.

This product has been qualified to the Automotive Electronics Council (AEC) standard Q100 (Grade 1) and is suitable for use in automotive applications.

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  • 文档
  • 支持
  • 订购中
  • 交互式数据手册

产品细节

Features and benefits

  • Automotive product qualification in accordance with AEC-Q100 (Grade 1)

    • Specified from -40 °C to +85 °C and -40 °C to +125 °C

  • Wide supply voltage range from 1.65 V to 5.5 V

  • High noise immunity

  • Overvoltage tolerant inputs to 5.5 V

  • Complies with JEDEC standard:

    • JESD8-7 (1.65 V to 1.95 V)

    • JESD8-5 (2.3 V to 2.7 V)

    • JESD8C (2.7 V to 3.6 V)

    • JESD36 (4.5 V to 5.5 V)

  • ±24 mA output drive (VCC = 3.0 V)

  • CMOS low power dissipation

  • IOFF circuitry provides partial Power-down mode operation

  • Latch-up performance exceeds 250 mA

  • Direct interface with TTL levels

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

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More information

品质及可靠性免责声明

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Longevity

The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.

样品

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交互式数据手册

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册