60 V NPN/PNP low V_CEsat (BISS) transistor

NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.



型号 可订购的器件编号 订购代码(12NC) 封装 从经销商处购买


  • Very low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High collector current gain (hFE) at high IC
  • High efficiency due to less heat generation
  • Smaller required Printed-Circuit Board (PCB) area than for conventional transistors


  • Loadswitch
  • Charging circuits
  • Battery-driven devices
  • Power switches (e.g. motors, fans)
  • Power management


型号Package versionPackage nameSize (mm)PolarityConfigurationPtot (mW)VCEO [max] (V)IC [max] (mA)hFE [min]Automotive qualified
SOT96-1SO84.9 x 3.9 x 1.75NPN/PNP2730606700300N

PCB Symbol, Footprint and 3D Model

Model Name描述

文档 (11)

PBSS4041SPN60 V NPN/PNP low V_CEsat (BISS) transistorData sheet2018-08-28
AN10909Low VCEsat transistors in medium power loadswitch applicationsApplication note2013-03-14
AN11045Next generation of NXP low VCEsat transistors: improved technology for discrete semiconductorsApplication note2013-03-04
AN11076Thermal behavior of small-signal discretes on multilayer PCBsApplication note2021-06-23
PBSS4041SPN_Nexperia_Product_QualityPBSS4041SPN Nexperia Product QualityQuality document2019-05-20
PBSS4041SPN_Nexperia_Product_ReliabilityPBSS4041SPN Nexperia Product ReliabilityQuality document2019-04-29
PBSS4041SPNPBSS4041SPN SPICE modelSPICE model2023-11-17
SO-SOJ-REFLOWFootprint for reflow solderingReflow soldering2009-10-08
SO-SOJ-WAVEFootprint for wave solderingWave soldering2009-10-08
SOT96-1_115Tape reel SMD; standard product orientation 12NC ending 115Packing information2020-04-27
WAVE_BG-BD-1Wave soldering profileWave soldering2021-09-08


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PBSS4041SPNPBSS4041SPN SPICE modelSPICE model2023-11-17

PCB Symbol, Footprint and 3D Model

Model Name描述

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.