可订购部件
| 型号 | 可订购的器件编号 | 订购代码(12NC) | 封装 | 从经销商处购买 |
|---|---|---|---|---|
| NHDTA114YT | NHDTA114YTR | 934661361215 | SOT23 | 订单产品 |
| NHDTA114YT | NHDTA114YTVL | 934661361235 | SOT23 | 订单产品 |
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Click here for more informationNHDTA114YT
80 V, 100 mA PNP resistor-equipped transistors
PNP Resistor-Equipped Transistor (RET) family in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
Type number | R1 | R2 | Package | NPN complement: | |
|---|---|---|---|---|---|
kΩ | kΩ | Nexperia | JEDEC | ||
NHDTA123JT | 2.2 | 47 | SOT23 | TO-236AB | NHDTC123JT |
NHDTA143ZT | 4.7 | 47 | NHDTC143ZT | ||
NHDTA114YT | 10 | 47 | NHDTC114YT | ||
Features and benefits
100 mA output current capability
High breakdown voltage
Built-in resistors
Simplifies circuit design
Reduces component count
Reduces pick and place costs
AEC-Q101 qualified
Applications
Digital applications
Cost saving alternative for BC856 series in digital applications
Controlling IC inputs
Switching loads
参数类型
| 型号 | Package version | Package name | Size (mm) | IC [max] (mA) | R1 (typ) (kΩ) | R2 (typ) (kΩ) | Channel type | Ptot (mW) | VCEO (V) |
|---|---|---|---|---|---|---|---|---|---|
| NHDTA114YT | SOT23 | SOT23 | 2.9 x 1.3 x 1 | 100 | 10 | 47 | PNP | 250 | 80 |
封装
| 型号 | 可订购的器件编号，（订购码(12NC)） | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
|---|---|---|---|---|---|---|---|
| NHDTA114YT | NHDTA114YTR (934661361215) |
Active | QB% |
(SOT23) |
SOT23 |
REFLOW_BG-BD-1
WAVE_BG-BD-1 |
SOT23_215 |
| NHDTA114YTVL (934661361235) |
Active | QB% | SOT23_235 |
环境信息
| 型号 | 可订购的器件编号 | 化学成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| NHDTA114YT | NHDTA114YTR | NHDTA114YT |
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| NHDTA114YT | NHDTA114YTVL | NHDTA114YT |
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文档 (14)
| 文件名称 | 标题 | 类型 | 日期 |
|---|---|---|---|
| NHDTA123JT_143ZT_114YT_SER | 80 V, 100 mA PNP resistor-equipped transistors | Data sheet | 2020-07-07 |
| AN90024 | Resistor Equipped Transistors (RETs): Key parameters and application insights | Application note | 2021-08-03 |
| AN90063 | Questions about package outline drawings | Application note | 2025-03-12 |
| SOT23 | 3D model for products with SOT23 package | Design support | 2019-01-22 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| SOT23_mk | plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body | Marcom graphics | 2017-01-28 |
| SOT23 | plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body | Package information | 2022-10-12 |
| SOT23_215 | Reel pack for SMD, 7"; Q3/T4 product orientation | Packing information | 2025-01-20 |
| SOT23_235 | Reel pack for SMD, 11"; Q3/T4 product orientation | Packing information | 2020-06-01 |
| NHDTA114YT_Nexperia_Product_Reliability | NHDTA114YT Nexperia Product Reliability | Quality document | 2025-05-14 |
| REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
| NHDTA114YT | NHDTA114YT SPICE model | SPICE model | 2024-08-27 |
| NHDTA114YT_cauer | NHDTA114YT RC thermal cauer model | Thermal design | 2020-06-22 |
| WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名称 | 标题 | 类型 | 日期 |
|---|---|---|---|
| NHDTA114YT | NHDTA114YT SPICE model | SPICE model | 2024-08-27 |
| NHDTA114YT_cauer | NHDTA114YT RC thermal cauer model | Thermal design | 2020-06-22 |
| SOT23 | 3D model for products with SOT23 package | Design support | 2019-01-22 |
样品
作为 Nexperia 的客户，您可以通过我们的销售机构订购样品。
如果您没有 Nexperia 的直接账户，我们的全球和地区分销商网络可为您提供 Nexperia 样品支持。查看官方经销商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.