可订购部件
| 型号 | 可订购的器件编号 | 订购代码(12NC) | 封装 | 从经销商处购买 |
|---|---|---|---|---|
| GAN039-650NTB | GAN039-650NTBJ | 934662153118 | SOT8005 | 订单产品 |
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Click here for more informationGAN039-650NTB
650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package
The GAN039-650NTB is a 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212i inverted package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance.
Features and benefits
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Simplified driver design as standard level MOSFET gate drivers can be used:
0 V to 12 V drive voltage
Gate threshold voltage VGSth of 4 V
Robust gate oxide with ±20 V VGS rating
High gate threshold voltage of 4 V for gate bounce immunity
Low body diode Vf for reduced losses and simplified dead-time adjustments
Transient over-voltage capability for increased robustness
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CCPAK package technology:
Improved reliability, with reduced Rth(j-mb) for optimal cooling
Lower inductances for lower switching losses and EMI
150 °C maximum junction temperature
High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike traditional QFN packages
Visual (AOI) soldering inspection, no need for expensive x-ray equipment
Easy solder wetting for good mechanical solder joints
Applications
Hard and soft switching converters for industrial and datacom power
Bridgeless totempole PFC
PV and UPS inverters
Servo motor drives
参数类型
| 型号 | Package version | Package name | Product status | Configuration | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GAN039-650NTB | SOT8005 | CCPAK1212i | Production | cascode | N | 1 | 650 | 39 | 150 | 58.5 | 5 | 26 | 250 | 187 | 3.9 | N | 1980 | 144 | 2020-07-30 |
封装
| 型号 | 可订购的器件编号，（订购码(12NC)） | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
|---|---|---|---|---|---|---|---|
| GAN039-650NTB | GAN039-650NTBJ (934662153118) |
Active | 039INTB |
CCPAK1212i (SOT8005) |
SOT8005 | 暂无信息 |
下表中的所有产品型号均已停产 。
| 型号 | 可订购的器件编号，（订购码(12NC)） | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
|---|---|---|---|---|---|---|---|
| GAN039-650NTB | GAN039-650NTBZ (934662153139) |
Withdrawn / End-of-life | 039INTB |
CCPAK1212i (SOT8005) |
SOT8005 | 暂无信息 |
Boards
| Part number | Description | Type | Quick links | Shop link |
|---|---|---|---|---|
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描述 For this evaluation board, the PFC circuit has been implemented on a 4-layer PCB, with 2 oz copper for the outer layers and 1.5 oz copper for the inner layers. GAN039-650NTB devices by Nexperia are used for both the fast and slow switching legs. The inductor is made of a High Flux core with the inductance of 480 μH and a DC resistance of 0.025 Ω, designed to operate at 65 kHz. A simple 4 A rated high/low side driver IC (Si8273) with 0 V and 12 V as the on/off voltage levels directly drives each GaN FET. The control function is handled by a TI UCC28180 PFC controller.
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类型 Evaluation board
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描述 The NX-HB-GAN039-TSCUL top-side cooled half-bridge evaluation board provides the elements of a simple buck or boost converter. This enables the basic study of the switching characteristics and efficiency achievable with Nexperia’s 650 V GaN FETs. The circuit can be configured for synchronous rectification, in either buck or boost mode. Selection jumpers allow the use of a single logic input or separate high side & low side logic inputs. The high-voltage input and output can operate at up to 400 V DC, with a power output of up to 3.5 kW or more, dependent upon cooling, ambient temperature and switching frequency. The inductor provided is intended for efficient operation at 100 kHz, however, other inductors and frequencies may be used.
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类型 Evaluation board
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描述 The NX-DP-GAN039-TSC double pulse evaluation board enables double-pulse testing of GaN FETs in a top-side cooled copper-clip package (CCPAK). It is optimized for low inductance and features a high-bandwidth current shunt that can be used to evaluate the switching performance with maximum precision. In addition, it can be used for thermal investigations and continuous operation of 5kW and beyond.
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类型 Evaluation board
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Shop link
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环境信息
| 型号 | 可订购的器件编号 | 化学成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| GAN039-650NTB | GAN039-650NTBJ | GAN039-650NTB |
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下表中的所有产品型号均已停产 。
| 型号 | 可订购的器件编号 | 化学成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| GAN039-650NTB | GAN039-650NTBZ | GAN039-650NTB |
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Series
文档 (19)
| 文件名称 | 标题 | 类型 | 日期 |
|---|---|---|---|
| GAN039-650NTB | 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package | Data sheet | 2023-12-05 |
| AN90004 | Probing considerations for fast switching applications | Application note | 2019-11-15 |
| AN90005 | Understanding Power GaN FET data sheet parameters | Application note | 2020-06-08 |
| AN90006 | Circuit design and PCB layout recommendations for GaN FET half bridges | Application note | 2019-11-15 |
| AN90030 | Paralleling of Nexperia cascode GaN FETs in half-bridge topology | Application note | 2023-03-22 |
| AN90030_translated | ハーフブリッジ・トポロジーにおけるNexperia製GaN FETの並列 | Application note | 2023-04-03 |
| AN90053 | Advanced SPICE models for Nexperia cascode Gallium Nitride (GaN) FETs | Application note | 2024-05-31 |
| AN90063 | Questions about package outline drawings | Application note | 2025-06-13 |
| SOT8005 | 3D model for products with SOT8005 package | Design support | 2023-03-13 |
| SOT8005 | Plastic, surface mounted copper clip package inverted (CCPAK1212i);13 terminals; 2.0 mm pitch, 12 mm x 9.4 mm x 2.5 mm body | Package information | 2025-05-13 |
| GAN039-650NxB_models_LTspice | GAN039-650NxB LTspice model | SPICE model | 2023-11-28 |
| GAN039-650NxB_models_SIMetrix | GAN039-650NxB SIMetrix SPICE model | SPICE model | 2023-11-28 |
| TN90004 | An insight into Nexperia Power GaN technology – Applications, quality, reliability and scalability | Technical note | 2020-07-21 |
| UM90008 | NX-HB-GAN039-TSCUL 3.5 kW half-bridge evaluation board with top-side cooled GaN FETs | User manual | 2023-10-17 |
| UM90024 | 4 kW analogue bridgeless totem-pole PFC evaluation board | User manual | 2023-11-21 |
| UM90028 | NX-DP-GAN039-TSC double pulse evaluation board with top-side cooled CCPAK GaN FETs | User manual | 2024-01-09 |
| nexperia_whitepaper_gan_need_for_efficient_conversion | White paper: Power GaN technology: the need for efficient power conversion | White paper | 2020-07-23 |
| nexperia_whitepaper_gan_need_for_efficient_conversion_CHN | 白皮书: 功率GaN技术： 高效功率转换的需求 | White paper | 2020-08-17 |
| nexperia_whitepaper_gan_need_for_efficient_conversion_Japanese | Whitepaper: GaN need for efficient conversion (Japanese) | White paper | 2021-05-20 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名称 | 标题 | 类型 | 日期 |
|---|---|---|---|
| GAN039-650NxB_models_LTspice | GAN039-650NxB LTspice model | SPICE model | 2023-11-28 |
| GAN039-650NxB_models_SIMetrix | GAN039-650NxB SIMetrix SPICE model | SPICE model | 2023-11-28 |
| SOT8005 | 3D model for products with SOT8005 package | Design support | 2023-03-13 |
订购、定价与供货
| 型号 | Orderable part number | Ordering code (12NC) | 状态 | 包装 | Packing Quantity | 在线购买 |
|---|---|---|---|---|---|---|
| GAN039-650NTB | GAN039-650NTBJ | 934662153118 | Active | 暂无信息 | 1,000 |
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样品
作为 Nexperia 的客户，您可以通过我们的销售机构订购样品。
如果您没有 Nexperia 的直接账户，我们的全球和地区分销商网络可为您提供 Nexperia 样品支持。查看官方经销商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.