GAN039-650NTB

650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package

The GAN039-650NTB is a 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212i inverted package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance.

650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package

从安世半导体购买

SKU	库存*	MOQ	单位价格**	数量

从经销商处购买

卖方	SKU	库存	MOQ		1	10	100	1,000	10,000	购买

卖方	SKU	库存	MOQ		1	10	100	1,000	10,000	购买

卖方	SKU	库存	MOQ		1	10	100	1,000	10,000	购买

卖方	SKU	库存	MOQ		1	10	100	1,000	10,000	购买

* 库存数量可能变化
** 显示的单位价格是基于小量订单
*** 授权经销商销售的库存过剩、到期和停产产品由经销商保证产品的可靠性，不再由安世半导体保证

特性

Simplified driver design as standard level MOSFET gate drivers can be used:
- 0 V to 12 V drive voltage
- Gate threshold voltage V_GSth of 4 V
Robust gate oxide with ±20 V V_GS rating
High gate threshold voltage of 4 V for gate bounce immunity
Low body diode V_f for reduced losses and simplified dead-time adjustments
Transient over-voltage capability for increased robustness
CCPAK package technology:
- Improved reliability, with reduced R_th(j-mb) for optimal cooling
- Lower inductances for lower switching losses and EMI
- 175 °C maximum junction temperature
- High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike traditional QFN packages
- Visual (AOI) soldering inspection, no need for expensive x-ray equipment
- Easy solder wetting for good mechanical solder joints

目标应用

Hard and soft switching converters for industrial and datacom power
Bridgeless totempole PFC
PV and UPS inverters
Servo motor drives

参数类型

型号	Package version	Package name	Product status	Channel type	Nr of transistors	V_DS [max] (V)	R_DSon [max] @ V_GS = 10 V (mΩ)	T_j [max] (°C)	I_D [max] (A)	Q_GD [typ] (nC)	Q_G(tot) [typ] @ V_GS = 10 V (nC)	P_tot [max] (W)	Q_r [typ] (nC)	V_GSth [typ] (V)	Automotive qualified	C_iss [typ] (pF)	C_oss [typ] (pF)	Date
GAN039-650NTB	SOT8005	CCPAK	Development	N	1	650	39	150	58.5	5	26	250	187	3.9	N	1980	144	2020-07-30

Package

型号	可订购的器件编号，（订购码(12NC)）	状态	标示	封装	尺寸版本	回流焊/波峰焊	包装
GAN039-650NTB	GAN039-650NTBZ ( 9346 621 53139 )	Development	039INTBX	CCPAK (SOT8005)	SOT8005		Reel 13" Q4/T2

品质、可靠性及化学成分

型号	可订购的器件编号	化学成分	RoHS / RHF	MSL	MSL无铅
GAN039-650NTB	GAN039-650NTBZ	暂无信息

品质及可靠性免责声明

文档 (5)

文件名称	标题	类型	日期
GAN039-650NTB	650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package	Data sheet	2021-04-19
nexperia_document_leaflet_GaN_CCPAK	CCPAK Power GaN FETs flyer	Leaflet	2020-08-17
nexperia_document_leaflet_CCPAK_2020_CHN	CCPAK Power GaN FETs flyer	Leaflet	2020-08-20
nexperia_whitepaper_gan_robustness_aecq101	White paper: GaN FET technology and the robustness needed for AEC-Q101 qualification	White paper	2020-06-08
nexperia_whitepaper_gan_need_for_efficient_conversion_CHN	白皮书: 功率GaN技术：高效功率转换的需求	White paper	2020-08-17

支持

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订购、定价与供货

型号	Orderable part number	Ordering code (12NC)	包装	Packing quantity	在线购买

样品

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