As the innovators of copper-clip package technology, Nexperia brings almost 20 years experience of producing high-quality, high-robustness SMD packaging to it’s GaN FET portfolio. Adopting proven technology, CCPAK gives industry-leading performance in a truly innovative package. Wire-bond free for optimized thermal and electrical performance, and simplified design of cascode configuration to eliminate the need for complicated drivers and controls.


Top-side and bottom-side cooling

For added flexibility in designs and to further improve heat dissipation, CCPAK is available in both top-side cooling and traditional bottom-side cooling package designs.

The first in the portfolio of GaN SMD packages, the CCPAK1212 and CCPAK1212i have a compact footprint of only 12 x 12 mm and a low package height of 2.5 mm.

image image

CCPAK GaN FETs videos

Copper-clip SMD CCPAK GaN FET package in half-bridge evaluation board

CCPAK and next generation HV power GaN technology


  • Copper-clip
    • 3 times lower inductances than industry-standard packages for lower switching losses and EMI
    • Higher reliability compared to wire-bond solution
  • Thermal performance
    • Low Rth(j-mb) typ (<0.5 K/W) for optimal cooling
    • 175 °C Tj max
  • Manufacturability and robustness
    • Flexible leads for temperature cycling reliability
    • Flexible gull winged leads for robust board level reliability
    • Compatible with SMD soldering and AOI
  • Two cooling options
    • Bottom-side cooling (CCPAK1212)
    • Top-side cooling (CCPAK1212i)
  • Plan for Qualifications
    • AEC-Q101
    • MSL1
    • Halogen free


  • Automotive EV
    • On board charging
    • DC-to-DC converters
    • Traction inverters
  • Industrial
    • Telecom and server Titanium grade power supplies
    • Industrial vehicle charging
    • Solar (PV) inverter
    • AC servo drive / Frequency inverters
    • Battery storage/UPS inverters

Parametric search




型号 描述 状态 快速访问
GAN039-650NBB 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package Qualification
GAN039-650NTB 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package Production


文件名称 标题 类型 日期
AN90005 Understanding Power GaN FET data sheet parameters Application note 2020-06-08
AN90004 Probing considerations for fast switching applications Application note 2019-11-15
AN90006 Circuit design and PCB layout recommendations for GaN FET half bridges Application note 2019-11-15
RS3138_SOT8005_Combi_2_scr CCPAK1212i (SOT8005) package image Marcom graphics 2020-05-26
nexperia_whitepaper_gan_robustness_aecq101 White paper: GaN FET technology and the robustness needed for AEC-Q101 qualification White paper 2020-06-08
nexperia_whitepaper_gan_robustness_aecq101_CN Whitepaper: GaN FET technology and the robustness needed for AEC-Q101 qualification – Chinese (650 V GaN FET技术可提供 出色效率,以及AEC-Q101 认证所需的耐用性) White paper 2020-07-15
TN90004 An insight into Nexperia Power GaN technology – Applications, quality, reliability and scalability Technical note 2020-07-21
nexperia_whitepaper_gan_need_for_efficient_conversion White paper: Power GaN technology: the need for efficient power conversion White paper 2020-07-23
nexperia_whitepaper_gan_need_for_efficient_conversion_CHN 白皮书: 功率GaN技术: 高效功率转换的需求 White paper 2020-08-17
Nexperia_document_book_MOSFETGaNFETApplicationHandbook_2020 MOSFET & GaN FET Application Handbook User manual 2020-11-05
nexperia_whitepaper_gan_need_for_efficient_conversion_Japanese Whitepaper: GaN need for efficient conversion (Japanese) White paper 2021-05-20
AN90030 Paralleling of Nexperia cascode GaN FETs in half-bridge topology Application note 2023-03-22
Nexperia_Selection_guide_2023 Nexperia Selection Guide 2023 Selection guide 2023-05-10
nexperia_document_leaflet_GaNFETs_2023 Power GaN FETs leaflet Leaflet 2023-10-25
nexperia_document_leaflet_GaNFETs_2023_CHN Power GaN FETs leaflet Leaflet 2023-10-25
nexperia_document_leaflet_GaN_CCPAK_2023 CCPAK GaN FETs Leaflet 2023-10-25
nexperia_document_leaflet_GaN_CCPAK_2023_CHN CCPAK GaN FETs Chinese Leaflet 2023-10-25



Datasheets (2)

文件名称 标题 类型 日期
GAN039-650NBB 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package Data sheet 2023-12-05
GAN039-650NTB 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package Data sheet 2023-12-05