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CCPAK GaN FETs (SMD)

As the innovators of copper-clip package technology, Nexperia brings almost 20 years experience of producing high-quality, high-robustness SMD packaging to it’s GaN FET portfolio. Adopting proven technology, CCPAK gives industry-leading performance in a truly innovative package. Wire-bond free for optimized thermal and electrical performance, and simplified design of cascode configuration to eliminate the need for complicated drivers and controls.

Key features and benefits

  • Copper clip
    • 3 times lower inductances than industry-standard packages for lower switching losses and EMI
    • Higher reliability compared to wire-bond solution
  • Thermal performance
    • Low Rth(j-mb) typ (<0.5 K/W) for optimal cooling
    • 175 °C Tj max
  • Manufacturability and robustness
    • Flexible leads for temperature cycling reliability
    • Flexible gull winged leads for robust board level reliability
    • Compatible with SMD soldering and AOI
  • Two cooling options
    • Bottom-side cooling (CCPAK1212)
    • Top-side cooling (CCPAK1212i)
  • Plan for Qualifications
    • AEC-Q101
    • MSL1
    • Halogen free

Key applications

  • Automotive EV
    • On board charging
    • DC-to-DC converters
    • Traction inverters
  • Industrial
    • Telecom and server Titanium grade power supplies
    • Industrial vehicle charging
    • Solar (PV) inverter
    • AC servo drive / Frequency inverters
    • Battery storage / UPS inverters

Top-side and bottom-side cooling

For added flexibility in designs and to further improve heat dissipation, CCPAK is available in both top-side cooling and traditional bottom-side cooling package designs.

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CCPAK GaN FETs (SMD)
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Products

GaN FETs

型号 描述 状态 快速访问
GAN039-650NBB 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package Development
GAN039-650NBBA 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package Development
GAN039-650NTB 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package Development
GAN039-650NTBA 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package Development

Documentation

文件名称 标题 类型 日期
AN90005 Understanding Power GaN FET data sheet parameters Application note 2020-06-08
RS3138_SOT8005_Combi_2_scr CCPAK1212i (SOT8005) package image Marcom graphics 2020-05-26
Nexperia_document_brochure_GaN_2021 Nexperia_document_brochure_GaN_2021 Brochure 2021-05-18
nexperia_whitepaper_gan_robustness_aecq101 White paper: GaN FET technology and the robustness needed for AEC-Q101 qualification White paper 2020-06-08
nexperia_whitepaper_gan_robustness_aecq101_CN Whitepaper: GaN FET technology and the robustness needed for AEC-Q101 qualification – Chinese (650 V GaN FET技术可提供 出色效率,以及AEC-Q101 认证所需的耐用性) White paper 2020-07-15
AN90021 Power GaN technology: the need for efficient power conversion Application note 2020-08-14
nexperia_document_leaflet_GaN_CCPAK CCPAK Power GaN FETs flyer Leaflet 2020-08-17
nexperia_document_leaflet_CCPAK_2020_CHN CCPAK Power GaN FETs flyer Leaflet 2020-08-20
Nexperia_document_book_MOSFETGaNFETApplicationHandbook_2020 MOSFET & GaN FET Application Handbook User manual 2020-11-05
nexperia_whitepaper_gan_need_for_efficient_conversion_Japanese Whitepaper: GaN need for efficient conversion (Japanese) White paper 2021-05-20
Nexperia_Selection_guide_2022 Nexperia Selection Guide 2022 Selection guide 2022-01-05

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Datasheets (4)

文件名称 标题 类型 日期
GAN039-650NBB 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package Data sheet 2021-04-19
GAN039-650NBBA 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package Data sheet 2021-04-19
GAN039-650NTB 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package Data sheet 2021-04-19
GAN039-650NTBA 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package Data sheet 2021-04-19