双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

SiC power devices

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

80 - 200 V high-power GaN devices

High-power efficiency for next-gen power systems

Nexperia’s high-power medium-voltage (80 V to 200 V) GaN platform is engineered for the demanding, high-power applications driving the future of power conversion. Combining ultra-low RDS(on), low QG and QOSS, and high-frequency switching, these devices deliver exceptional efficiency, power density and dynamic performance. Available in advanced QFN packages with top- and bottom-side cooling, they support high current levels with excellent thermal performance. Ideal for AI datacenters, industrial systems, robotics, energy and motor drives, they enable lower losses, faster response and more compact, scalable power designs for next-generation high-power systems.

参数搜索

 80 - 200 V GaN power devices
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产品

型号 描述 状态 快速访问
GANE0R8-100QTM 100 V, 0.75 mOhm Gallium Nitride (GaN) FET in a QFN 3 mm x 5 mm TSC package Development
GANE1R2-100QTM 100 V, 1.2 mOhm Gallium Nitride (GaN) FET in a QFN 3.3 mm x 3.3 mm TSC package Development
GANE3R5-200QTM 200 V, 3.5 mOhm Gallium Nitride (GaN) FET in a QFN 3 mm x 5 mm TSC package Development
GANE7R2-200QTM 200 V, 7.2 mOhm Gallium Nitride (GaN) FET in a QFN 3 mm x 5 mm TSC package Development
Visit our documentation center for all documentation

Application note (2)

文件名称 标题 类型 日期
AN90005.pdf Understanding Power GaN FET data sheet parameters Application note 2026-10-01
AN90004.pdf Probing considerations for fast switching applications Application note 2026-10-01

Leaflet (1)

文件名称 标题 类型 日期
nexperia_document_leaflet_GaNFETs_2026.pdf Power GaN FETs Leaflet 2026-10-01

User manual (1)

文件名称 标题 类型 日期
Nexperia_document_book_MOSFETGaNFETApplicationHandbook_2020.pdf MOSFET & GaN FET Application Handbook User manual 2026-10-01

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