双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

NGW40T65M3DFP

NGW40T65M3DFP Production

650 V, 40 A trench field-stop IGBT with full rated silicon diode

The NGW40T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third⁠⁠-⁠⁠generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW40T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short-⁠circuit withstand time of 5 μs. This hard⁠-⁠switching 650 V, 40 A IGBT is optimized for high⁠-⁠voltage, high⁠-⁠frequency industrial power inverter applications and servo motor drive applications.

  • 产品细节
  • 文档
  • 支持
  • 订购中
  • 交互式数据手册

产品细节

Features

  • Device current is rated at 40 A

  • Low conduction and switching losses

  • Stable and tight parameters for easy parallel operation

  • Maximum junction temperature 175 °C

  • Fully rated and soft fast reverse recovery diode

  • 5 μs short circuit withstand time

  • HV-H3TRB qualified

Applications

  • Motor drives for industrial and consumer appliances

    • Servo motors operating between 5-20 kW (up to 20 kHz) for robotics, elevators, operating grippers, in-line manufacturing, etc.

  • Power inverters, such as

    • Uninterruptible Power Supply (UPS) inverter

    • EV charging converter

  • Induction heating

  • Welding

Register once, drag and drop ECAD models into your CAD tool and speed up your design.

More information

品质及可靠性免责声明

支持

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Longevity

The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.

样品

作为 Nexperia 的客户,您可以通过我们的销售机构订购样品。

如果您没有 Nexperia 的直接账户,我们的全球和地区分销商网络可为您提供 Nexperia 样品支持。查看官方经销商列表

交互式数据手册

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册