用于热插拔和软启动的ASFET

可靠的线性模式,增强的SOA与低导通电阻

无论是云还是边缘技术,都和我们忙碌的生活息息相关。我们的日常生活很大程度上依赖于始终开启的机架式计算机、通信和存储系统。要确保这些系统不会出现电源中断,在将替换电路板插入运行中的系统时保护上面的器件,必须小心控制冲击电流。在常规MOSFET中,强大的SOA性能和低导通电阻是互斥的。Nexperia专用于热插拔和软启动的MOSFET在单个器件上同时提供这两种功能,并针对不间断的运行要求进行了优化。

用于热插拔和软启动的ASFET专为支持始终开机的应用和设备而设计:

  • 当在背板中引入电容负载时,需要采用具备强劲线性模式性能和增强安全工作区域(SOA)的MOSFET来高效可靠地控制冲击电流
  • 一旦安全接通替换电路板,MOSFET便会完全导通。在此运行模式下,具有低导通电阻值是最重要的,它有助于最大限度地保持低温和高系统效率
  
    

用于通信基础设施的热插拔

 

Nexperia实际应用

评估集成PMBus的ADM1272高压正热插拔控制器及数字功率监控器”中引用的PSMN4R8-100BSE  

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Design considerations with sub-milliohm MOSFETs – Quick Learning

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ASFETs for Hotswap and Soft Start
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产品

型号 描述 状态 快速访问
PSMN013-100YSE N-channel 100 V 13 mΩ standard level MOSFET in LFPAK56 Production
PSMN0R7-25YLD N-channel 25 V, 0.72 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology Production
PSMN0R9-25YLD N-channel 25 V, 0.85 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology Production
PSMN0R9-30YLD N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology Production
PSMN1R0-30YLD N-channel 30 V, 1.0 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology Production
PSMN1R2-25YL N-channel 25 V 1.2 mΩ logic level MOSFET in LFPAK Production
PSMN1R3-30YL N-channel 30 V 1.3 mΩ logic level MOSFET in LFPAK Production
PSMN1R5-30BLE N-channel 30 V 1.5 mΩ logic level MOSFET in D2PAK Production
PSMN1R7-30YL N-channel 30 V 1.7 mΩ logic level MOSFET in LFPAK Production
PSMN2R0-30YLE N-channel 30 V 2 mΩ logic level MOSFET in LFPAK Production
PSMN2R3-100SSE N-channel 100 V, 2.3 mOhm MOSFET with enhanced SOA in LFPAK88 Development
PSMN2R9-100SSE N-channel 100 V, 2.9 mOhm MOSFET with enhanced SOA in LFPAK88 Development
PSMN3R4-30BLE N-channel 30 V 3.4 mΩ logic level MOSFET in D2PAK Production
PSMN3R7-100BSE N-channel 100 V, 3.95 mΩ, standard level MOSFET in D2PAK Production
PSMN4R2-80YSE N-channel 80 V, 4.2 mOhm MOSFET with enhanced SOA in LFPAK56E Production
PSMN4R8-100BSE N-channel 100 V 4.8 mΩ standard level MOSFET in D2PAK Production
PSMN4R8-100PSE N-channel 100 V 5 mΩ standard level MOSFET with improved SOA in TO220 package Production
PSMN4R8-100YSE N-channel 100 V, 4.8 mOhm MOSFET with enhanced SOA in LFPAK56E Production
PSMN7R6-100BSE N-channel 100 V 7.6 mΩ standard level MOSFET in D2PAK Production
PSMN7R8-100PSE N-channel 100 V 7.8 mΩ standard level MOSFET with improved SOA in TO220 package Production
PSMN8R9-100BSE N-channel 100 V, 10 mOhm, standard level MOSFET in D2PAK Production
PSMNR51-25YLH N-channel 25 V, 0.57 mΩ, 380 A logic level MOSFET in LFPAK56E using NextPowerS3 technology Production
PSMNR58-30YLH N-channel 30 V, 0.67 mΩ, 380 A logic level MOSFET in LFPAK56E using NextPowerS3 technology Production
PSMNR60-25YLH N-channel 25 V, 0.7 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 technology Production
PSMNR70-30YLH N-channel 30 V, 0.82 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 technology Production
Visit our documentation center for all documentation

Application note (1)

文件名称 标题 类型 日期
AN90016 Maximum continuous currents in NEXPERIA LFPAK power MOSFETs Application note 2020-09-03

Selection guide (1)

文件名称 标题 类型 日期
Nexperia_Selection_guide_2021 Nexperia Selection Guide 2021 Selection guide 2021-01-08

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