ASFETs for Hotswap and Soft Start

Reliable linear mode, wide SOA and low RDS(on)

Whether it is in the cloud or at the edge, we truly live in a 24/7 world. So much of our daily lives depend on rack-based computers, communications and storage systems that are always-on. Ensuring these systems do not experience any power disruption and to protect the components on replacement boards when they are inserted into a live system, it is essential that in-rush current is carefully controlled. That requires specific MOSFETs optimized for a non-stop world. 

ASFETs for Hotswap and Soft Start are designed specifically to support always-on applications and equipment:

  • MOSFETs with a strong linear mode performance and wide Safe Operating Area (SOA) are required to manage in-rush current effectively and reliably when capacitive loads are introduced to the backplane
  • Once a replacement board is safely energized, the MOSFET is turned fully ON. In this mode of operation, a low RDS(on) value is of primary importance, helping to keep temperatures down and system efficiency at a maximum
  
    

Hot swap for communications infrastructure

 

Featured products

PSMNR51-25YLH

PSMN4R8-100BSE

PSMN2R3-100SSE

N-channel 25 V, 0.57 mΩ, 380 A logic level MOSFET in LFPAK56E  N-channel 100 V 4.8 mΩ standard level MOSFET in D2PAK N-channel 100 V, 2.3 mΩ, SuperSOA MOSFET in LFPAK88

 

Featured documents

AN90016

 

 

 

 

     

Latest videos

The importance of SOA

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产品

型号 描述 状态 快速访问
PSMN013-100YSE N-channel 100 V 13 mΩ standard level MOSFET in LFPAK56 Production
PSMN0R7-25YLD N-channel 25 V, 0.72 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology Production
PSMN0R9-25YLD N-channel 25 V, 0.85 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology Production
PSMN0R9-30YLD N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology Production
PSMN1R0-30YLD N-channel 30 V, 1.0 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology Production
PSMN1R2-25YL N-channel 25 V 1.2 mΩ logic level MOSFET in LFPAK Production
PSMN1R3-30YL N-channel 30 V 1.3 mΩ logic level MOSFET in LFPAK Production
PSMN1R5-30BLE N-channel 30 V 1.5 mΩ logic level MOSFET in D2PAK Production
PSMN1R7-30YL N-channel 30 V 1.7 mΩ logic level MOSFET in LFPAK Production
PSMN2R0-30YLE N-channel 30 V 2 mΩ logic level MOSFET in LFPAK Production
PSMN2R3-100SSE N-channel 100 V, 2.3 mΩ, SuperSOA MOSFET in LFPAK88 Development
PSMN3R4-30BLE N-channel 30 V 3.4 mΩ logic level MOSFET in D2PAK Production
PSMN3R7-100BSE N-channel 100 V, 3.95 mΩ, standard level MOSFET in D2PAK Production
PSMN4R8-100BSE N-channel 100 V 4.8 mΩ standard level MOSFET in D2PAK Production
PSMN4R8-100PSE N-channel 100 V 5 mΩ standard level MOSFET with improved SOA in TO220 package Production
PSMN7R6-100BSE N-channel 100 V 7.6 mΩ standard level MOSFET in D2PAK Production
PSMN7R8-100PSE N-channel 100 V 7.8 mΩ standard level MOSFET with improved SOA in TO220 package Production
PSMNR51-25YLH N-channel 25 V, 0.57 mΩ, 380 A logic level MOSFET in LFPAK56E using NextPowerS3 technology Production
PSMNR58-30YLH N-channel 30 V, 0.67 mΩ, 380 A logic level MOSFET in LFPAK56E using NextPowerS3 technology Production
PSMNR60-25YLH N-channel 25 V, 0.7 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 technology Production
PSMNR70-30YLH N-channel 30 V, 0.82 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 technology Production

Application note (1)

文件名称 标题 类型 日期
AN90016 Maximum continuous currents in NEXPERIA LFPAK power MOSFETs Application note 2020-09-03

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