双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

74HC194D

74HC194D End of life

4-bit bidirectional universal shift register

The 74HC194 is a 4-bit bidirectional universal shift register. The synchronous operation of the device is determined by the mode select inputs (S0, S1). In parallel load mode (S0 and S1 HIGH) data appearing on the D0 to D3 inputs, when S0 and S1 are HIGH, is transferred to the Q0 to Q3 outputs. When S0 is HIGH and S1 is LOW data is entered serially via DSL and shifted from left to right; when S0 is LOW and S1 is HIGH data is entered serially via DSR and shifted from right to left. DSR and DSL allow multistage shift right or shift left data transfers without interfering with parallel load operation. If both S0 and S1 are LOW, existing data is retained in a hold mode. Mode select and data inputs are edge-triggered, responding only to the LOW-to-HIGH transition of the clock (CP). Therefore, the only timing restriction is that the mode control and selected data inputs must be stable one set-up time prior to the positive transition of the clock pulse. When LOW, the asynchronous master reset (MR) overrides all other input conditions and forces the Q outputs LOW. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to voltages in excess of VCC.

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产品细节

Features and benefits

  • Wide supply voltage range from 2.0 V to 6.0 V

  • CMOS low power dissipation

  • High noise immunity

  • Latch-up performance exceeds 100 mA per JESD 78 Class II Level B

  • Complies with JEDEC standards:

    • JESD8C (2.7 V to 3.6 V)
    • JESD7A (2.0 V to 6.0 V)
  • CMOS input levels

  • Shift-left and shift right capability

  • Synchronous parallel and serial data transfer

  • Easily expanded for both serial and parallel operation

  • Asynchronous master reset

  • Hold (‘do nothing’) mode

  • ESD protection:

    • HBM JESD22-A114F exceeds 2000 V

    • MM JESD22-A115-A exceeds 200 V

  • Specified from -40 °C to +85 °C and -40 °C to +125 °C

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Longevity

The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.

交互式数据手册

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册