双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

74HCT597DB

74HCT597DB End of life

8-bit shift register with input flip-flops

The 74HC597; 74HCT597 is an 8-bit shift register with input flip-flops. It consists of an 8-bit storage register feeding a parallel-in, serial-out 8-bit shift register. Both the storage register and the shift register have positive edge-triggered clocks. The shift register also has direct load (from storage) and clear inputs. Inputs include clamp diodes that enable the use of current limiting resistors to interface inputs to voltages in excess of VCC.

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  • 交互式数据手册

产品细节

Features and benefits

  • Wide supply voltage range from 2.0 V to 6.0 V

  • CMOS low power dissipation

  • High noise immunity

  • Input levels:

    • For 74HC597: CMOS level

    • For 74HCT597: TTL level

  • 8-bit parallel storage register inputs

  • Shift register has direct overriding load and clear

  • Latch-up performance exceeds 100 mA per JESD 78 Class II Level B

  • Complies with JEDEC standards

    • JESD8C (2.7 V to 3.6 V)

    • JESD7A (2.0 V to 6.0 V)

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Multiple package options

  • Specified from -40 °C to +85 °C and from -40 °C to +125 °C

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More information

品质及可靠性免责声明

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Longevity

The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.

交互式数据手册

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册