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PSMN7R5-30MLD

N-channel 30 V, 7.5 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.

可订购部件

型号 可订购的器件编号 订购代码(12NC) 封装 从经销商处购买
PSMN7R5-30MLD PSMN7R5-30MLDX 934067972115 SOT1210 订单产品

特性

  • Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies
  • Superfast switching with soft-recovery; s-factor > 1
  • Low spiking and ringing for low EMI designs
  • Unique “SchottkyPlus” technology; Schottky-like performance with < 1µA leakage at 25°C
  • Optimised for 4.5 V gate drive
  • Low parasitic inductance and resistance
  • High reliability clip bonded and solder die attach Mini Power SO8 package; no glue, no wire bonds, qualified to 175°C
  • Exposed leads for optimal visual solder inspection

目标应用

  • On-board DC-to-DC solutions for server and telecommunications
  • Secondary-side synchronous rectification in telecommunication applications
  • Voltage regulator modules (VRM)
  • Point-of-Load (POL) modules
  • Power delivery for V-core, ASIC, DDR, GPU, VGA and system components
  • Brushed and brushless motor control

参数类型

型号Package versionPackage nameProduct statusChannel typeNumber of transistorsVDS [max] (V)RDSon [max] @ VGS = 10 V (mΩ)RDSon [max] @ VGS = 4.5 V (mΩ)Tj [max] (°C)ID [max] (A)QGD [typ] (nC)QG(tot) [typ] @ VGS = 4.5 V (nC)QG(tot) [typ] @ VGS = 10 V (nC)Ptot [max] (W)Qr [typ] (nC)VGSth [typ] (V)Automotive qualifiedCiss [typ] (pF)Coss [typ] (pF)Date
PSMN7R5-30MLDSOT1210LFPAK33ProductionN1307.610.3175571.75.811.345111.7N6555782013-10-02

Package

型号可订购的器件编号,(订购码(12NC))状态标示封装尺寸版本回流焊/波峰焊包装
PSMN7R5-30MLDPSMN7R5-30MLDX
( 9340 679 72115 )
Active7D530L
LFPAK33
(SOT1210)
SOT1210Reel 7” Q1/T1 or Q2/T3

品质、可靠性及化学成分

型号可订购的器件编号化学成分RoHS / RHFMSLMSL无铅
PSMN7R5-30MLDPSMN7R5-30MLDXPSMN7R5-30MLD11
品质及可靠性免责声明

文档 (9)

文件名称标题类型日期
PSMN7R5-30MLDN-channel 30 V, 7.5 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 TechnologyData sheet2018-03-28
AN11261RC Thermal ModelsApplication note2020-05-11
AN11599Using power MOSFETs in parallelApplication note2016-07-13
AN90003LFPAK MOSFET thermal design guideApplication note2021-01-22
AN10874_ZHLFPAK MOSFET thermal design guide, Chinese versionApplication note2020-04-30
AN11113_ZHLFPAK MOSFET thermal design guide - Part 2Application note2020-04-30
PSMN7R5-30MLDPSMN7R5-30MLD Spice modelSPICE model2014-02-02
TN00008Power MOSFET frequently asked questions and answersTechnical note2020-06-24
PSMN7R5-30MLDPSMN7R5-30MLD Thermal modelThermal model2014-02-02

支持

如果您需要设计/技术支持,请告知我们并填写 应答表, 我们会尽快回复您。

模型

文件名称标题类型日期
PSMN7R5-30MLDPSMN7R5-30MLD Spice modelSPICE model2014-02-02
PSMN7R5-30MLDPSMN7R5-30MLD Thermal modelThermal model2014-02-02

订购、定价与供货

型号Orderable part numberOrdering code (12NC)包装在线购买
PSMN7R5-30MLDPSMN7R5-30MLDX934067972115Reel 7” Q1/T1 or Q2/T3订单产品

样品

安世半导体客户可通过我们的销售机构或直接通过在线样品商店订购样品: https://extranet.nexperia.com.

样品订单通常需要2-4天寄送时间。

如果您尚未取得安世半导体的直接采购帐号,我们的全球与区域经销网络可以协助您取得样品。