Dual N-channel TrenchMOS ultra low level FET
从安世半导体购买
| SKU | 库存* | MOQ | 单位价格** | 数量 |
|---|
从经销商处购买
| 卖方 | SKU | 库存 | MOQ | 1 | 10 | 100 | 1,000 | 10,000 | 购买 |
|---|
| 卖方 | SKU | 库存 | MOQ | 1 | 10 | 100 | 1,000 | 10,000 | 购买 |
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| 卖方 | SKU | 库存 | MOQ | 1 | 10 | 100 | 1,000 | 10,000 | 购买 |
|---|
| 卖方 | SKU | 库存 | MOQ | 1 | 10 | 100 | 1,000 | 10,000 | 购买 |
|---|
| 卖方 | SKU | 库存 | MOQ | 1 | 10 | 100 | 1,000 | 10,000 | 购买 |
|---|
* 库存数量可能变化
** 显示的单位价格是基于小量订单
*** 授权经销商销售的库存过剩、到期和停产产品由经销商保证产品的可靠性，不再由安世半导体保证
** 显示的单位价格是基于小量订单
*** 授权经销商销售的库存过剩、到期和停产产品由经销商保证产品的可靠性，不再由安世半导体保证
特性
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Low conduction losses due to low on-state resistance
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Saves PCB space due to small footprint (40 % smaller than SOT23)
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Suitable for high frequency applications due to fast switching characteristics
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Suitable for low gate drive sources
目标应用
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Driver circuits
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Switching in portable appliances
参数类型
| 型号 | Package version | Package name | Product status | Channel type | Nr of transistors | RDSon [max] @ VGS = 4.5 V (mΩ) | RDSon [max] @ VGS = 2.5 V (mΩ) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 4.5 V (nC) | Ptot [max] (W) | Automotive qualified | Date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PMGD400UN | SOT363 | TSSOP6 | End of life | N | 2 | 480 | 580 | 0.71 | 0.2 | 0.89 | 0.41 | N | 2011-01-24 |
PCB Symbol, Footprint and 3D Model
| Model Name | 描述 |
|---|---|
文档 (12)
| 文件名称 | 标题 | 类型 | 日期 |
|---|---|---|---|
| PMGD400UN | Dual N-channel uTrenchmos (tm) ultra low level FET | Data sheet | 2004-03-02 |
| AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2022-06-20 |
| AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2020-07-06 |
| AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2017-12-21 |
| AN11158_ZH | Understanding power MOSFET data sheet parameters | Application note | 2021-01-04 |
| AN11261 | RC Thermal Models | Application note | 2021-03-18 |
| AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
| AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
| AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
| TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2023-01-12 |
| REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
| WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
支持
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PCB Symbol, Footprint and 3D Model
| Model Name | 描述 |
|---|---|
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.