双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

SiC power devices

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

Wide-bandgap semiconductors

When it comes to power semiconductors, Nexperia’s one of the major players showing how wide-bandgap devices are setting the performance standard. Whether it’s 100 V, 650 V or 1200 V, our latest products are powering tomorrow’s innovations.

Wide-bandgap (WBG) technologies, such as silicon carbide (SiC) and gallium nitride (GaN), are transforming the landscape of power semiconductors. By enabling faster switching, higher efficiency and greater power density than traditional silicon devices, engineers can design smaller, lighter and more energy-efficient power systems. That’s helping drive innovation in electric vehicles, renewable energy, data centers and industrial automation.

Check out Nexperia's growing WBG portfolio:

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Events and webinars

2026年6月9日

PCIM Expo 2026 Nuremberg, Germany

Event

Hall 9, Booth #412
Hall 9, Booth #412
Learn more

2025年11月12日

Inside the device - Ruggedness testing of SiC MOSFETs

Online webinar

Fatih Cetindag and Nima Lotfi
Fatih Cetindag and Nima Lotfi
On demand webinar

2025年10月15日

Smart choices, better designs: Get insights into SiC MOSFET specs

Online webinar

Surabhi Hiremath, Zhe Yu and Rony Thomas
Surabhi Hiremath, Zhe Yu and Rony Thomas
On demand webinar