Explore our live demos at booth #1505.

Wide-bandgap FETs

When it comes to power FETs, Nexperia’s wide-bandgap devices (GaN, SiC) are setting the performance standard. Whether it’s 100 V, 650 V or 1200 V, our latest products are helping power tomorrow’s innovations.

Demos:

• Unveiling exceptional R_DS(on) temperature stability with Nexperia's first SMD SiC MOSFETs in a h-bridge configuration.
• 650 V SiC diodes in DPT/Step-down setup with outstanding FoM and virtual zero capacity.
• Half-bridge evaluation board for benchmarking E-mode GaN FET switching performance.

Analog & power signalling

For low-power applications particularly in IoT and consumer applications, maximising efficiency is critical. By integrating analog and power functions into single ICs, Nexperia is providing innovative and efficient solutions that improve system performance while reducing BOM cost.

Demos:

• NGD4300 gate driver empowering high efficiency control of a 3 phase BLDC motor.
• Evaluation board for demonstrating pulsed load capability from coin batteries.
• Nexperia's turnkey solution for high power density design for 65 W GaN PD chargers.
• Nexperia's first eFuse with low on-resistance and high current capability

Packaging 

Nexperia’s rich history of innovation in semiconductor packaging has delivered multiple industry standard footprints from the SOT23 to LFPAK56. Our expertise in copper clip and miniaturization ensures designer have the right power package for the job.

Demos:

• Thermal showdown: Highlighting Nexperia's power diode packaging technology for miniaturization and power density.
• Double pulse evaluation board for benchmarking CCPAK switching performance.
• Fairground fun grip challenge - can you break LFPAK?

Silicon Power

At the heart of all this innovation lies Nexperia’s proven power technologies. And we continue to drive performance and quality across our entire power portfolios. Ensuring you have the products you need to address your specific application and power requirements.

Demos:

• Linear mode operation of paralleled high current MOSFETs in a power switch.
• 100 V diodes delivering lowest losses for optimal bootstrapping applications.
• Power MOSFETs with low R_DS(on) and continuous high current capability.

Support

Designing today is not just about having the right power products and innovative power technologies. Nexperia also creates the most advanced tools to provide knowledge, learning and support for design engineers. From more traditional Application Handbooks, evaluation boards and models to innovative interactive application notes and pioneering interactive datasheets. Putting you in charge of the information you need to speed up your design process.

Join us for our live expo talk - 27th Feb, Room 201B, 3 - 3:30pm

Double Pulse Testing for Evaluation of Power Devices

Double-pulse testing is an ideal way to analyze and characterize the performance and behavior of semiconductor switches, in principle. In practice, it can be very difficult to achieve meaningful results when testing very fast switches. In addition to the normal challenges of designing a high-speed circuit, the double pulse test adds its own problems in the form of perturbations due to sensor insertion. In this talk we present tips and tools for successful double-pulse measurement of the latest high-speed Si, GaN, and SiC switches.

Presenter: Jim Honea, GaN Application Director