双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

RET 100 mA 单

RET晶体管可降低处理和开发成本，同时最大程度缩小空间

Nexperia面向标准小信号数字应用提供丰富的单双RET产品组合。

主要特性和优势

  • 一个晶体管和两个电阻集成在一个封装中
  • 降低处理和库存成本
  • 广泛的100 mA产品范围
  • 减少电路板空间
  • 500 mA产品组合
  • 缩短装配时间
  • 采用SOT363/457封装的完整双RET系列
  • 简化设计流程
  • 符合AEC-Q101标准
  • 减少焊点，提升系统可靠性

关键应用

  • 数字应用
  • 仪表盘
  • 发动机控制单元

参数搜索

RETs 100 mA single
数据加载中，请稍候...
参数搜索不可用。

产品

型号 描述 状态 快速访问
PDTA124E (Automotive) PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 22 kΩ ACT
PDTA124EE EndOfLife
PDTA143X_TO_124XQB-Q series 50 V, 100 mA PNP resistor-equipped transistors ACT
PDTA114YQB-Q 50 V, 100 mA PNP resistor-equipped transistors Production
PDTA123JQB-Q 50 V, 100 mA PNP resistor-equipped transistors Production
PDTA124XQB-Q 50 V, 100 mA PNP resistor-equipped transistors Production
PDTA143XQB-Q 50 V, 100 mA PNP resistor-equipped transistors Production
PDTA143ZQB-Q 50 V, 100 mA PNP resistor-equipped transistors Production
PDTC115T series NPN resistor-equipped transistors; R1 = 100 kOhm, R2 = open ACT
PDTC115TE NPN resistor-equipped transistors; R1 = 100 kOhm, R2 = open EndOfLife
PDTC115TM 50 V, 100 mA NPN resistor-equipped transistor; R1 = 100 kΩ, R2 = open Production
PDTC115TU 50 V, 100 mA NPN resistor-equipped transistor; R1 = 100 kΩ, R2 = open Production
PDTC143X_TO_124XQB-Q Series 50 V, 100 mA NPN resistor-equipped transistors ACT
PDTC114YQB-Q 50 V, 100 mA NPN resistor-equipped transistors Production
PDTC123JQB-Q 50 V, 100 mA NPN resistor-equipped transistors Production
PDTC124XQB-Q 50 V, 100 mA NPN resistor-equipped transistors Production
PDTC143XQB-Q 50 V, 100 mA NPN resistor-equipped transistors Production
PDTC143ZQB-Q 50 V, 100 mA NPN resistor-equipped transistors Production
PDTC143X_TO_124XQC-Q Series 50 V, 100 mA NPN resistor-equipped transistors ACT
PDTC114YQC-Q 50 V, 100 mA NPN resistor-equipped transistors Production
PDTC123JQC-Q 50 V, 100 mA NPN resistor-equipped transistors Production
PDTC124XQC-Q 50 V, 100 mA NPN resistor-equipped transistors Production
PDTC143XQC-Q 50 V, 100 mA NPN resistor-equipped transistors Production
PDTC143ZQC-Q 50 V, 100 mA NPN resistor-equipped transistors Production
PDTC143_114_124_144EQB-Q Series 50 V, 100 mA NPN resistor-equipped transistors ACT
PDTC114EQB-Q 50 V, 100 mA NPN resistor-equipped transistors Production
PDTC124EQB-Q 50 V, 100 mA NPN resistor-equipped transistors Production
PDTC143EQB-Q 50 V, 100 mA NPN resistor-equipped transistors Production
PDTC144EQB-Q 50 V, 100 mA NPN resistor-equipped transistors Production
PDTC143_114_124_144EQC-Q Series 50 V, 100 mA NPN resistor-equipped transistors ACT
PDTC114EQC-Q 50 V, 100 mA NPN resistor-equipped transistors Production
PDTC124EQC-Q 50 V, 100 mA NPN resistor-equipped transistors Production
PDTC143EQC-Q 50 V, 100 mA NPN resistor-equipped transistors Production
PDTC144EQC-Q 50 V, 100 mA NPN resistor-equipped transistors Production
PDTC144T series NPN resistor-equipped transistors; R1 = 47 kOhm, R2 = open ACT
PDTC144TM 50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = open Production
PDTC144TT 50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = open Production
PDTC144TU 50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = open Production
NHDTA114ET-Q 80 V, 100 mA PNP resistor-equipped transistors Production
NHDTA114EU-Q 80 V, 100 mA PNP resistor-equipped transistors Production
NHDTA114YT-Q 80 V, 100 mA PNP resistor-equipped transistors Production
NHDTA114YU-Q 80 V, 100 mA PNP resistor-equipped transistors Production
NHDTA123JT-Q 80 V, 100 mA PNP resistor-equipped transistors Production
NHDTA123JU-Q 80 V, 100 mA PNP resistor-equipped transistors Production
NHDTA124ET-Q 80 V, 100 mA PNP resistor-equipped transistors Production
NHDTA124EU-Q 80 V, 100 mA PNP resistor-equipped transistors Production
NHDTA143ZT-Q 80 V, 100 mA PNP resistor-equipped transistors Production
NHDTA143ZU-Q 80 V, 100 mA PNP resistor-equipped transistors Production
NHDTA144ET-Q 80 V, 100 mA PNP resistor-equipped transistors Production
NHDTA144EU-Q 80 V, 100 mA PNP resistor-equipped transistors Production
NHDTC114ET-Q 80 V, 100 mA NPN resistor-equipped transistors Production
NHDTC114EU-Q 80 V, 100 mA NPN resistor-equipped transistors Production
NHDTC114YT-Q 80 V, 100 mA NPN resistor-equipped transistors Production
NHDTC114YU-Q 80 V, 100 mA NPN resistor-equipped transistors Production
NHDTC123JT-Q 80 V, 100 mA NPN resistor-equipped transistors Production
NHDTC123JU-Q 80 V, 100 mA NPN resistor-equipped transistors Production
NHDTC124ET-Q 80 V, 100 mA NPN resistor-equipped transistors Production
NHDTC124EU-Q 80 V, 100 mA NPN resistor-equipped transistors Production
NHDTC143ZT-Q 80 V, 100 mA NPN resistor-equipped transistors Production
NHDTC143ZU-Q 80 V, 100 mA NPN resistor-equipped transistors Production
NHDTC144ET-Q 80 V, 100 mA NPN resistor-equipped transistors Production
NHDTC144EU-Q 80 V, 100 mA NPN resistor-equipped transistors Production
PDTA113EE PNP resistor-equipped transistors; R1 = 1 kOhm, R2 = 1 kOhm EndOfLife
PDTA113EM PNP resistor-equipped transistors; R1 = 1 kOhm, R2 = 1 kOhm Production
PDTA113EMB PNP resistor-equipped transistor; R1 = 1 kΩ, R2 = 1 kΩ Production
PDTA113ET PNP resistor-equipped transistors; R1 = 1 kOhm, R2 = 1 kOhm Production
PDTA113EU PNP resistor-equipped transistors; R1 = 1 kOhm, R2 = 1 kOhm Production
PDTA113ZE EndOfLife
PDTA113ZM-Q 50 V, 100 mA PNP resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ Production
PDTA113ZMB PNP resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ Production
PDTA113ZT-Q 50 V, 100 mA PNP resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ Production
PDTA113ZU-Q 50 V, 100 mA PNP resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ Production
PDTA114EE PNP resistor-equipped transistors; R1 = 10 kΩ; R2 = 10 kΩ EndOfLife
PDTA114EM 50 V, 100 mA PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ Production
PDTA114EMB 50 V, 100 mA PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ Production
PDTA114EQB-Q 50 V, 100 mA PNP resistor-equipped transistors Production
PDTA114EQC-Q 50 V, 100 mA PNP resistor-equipped transistors Production
PDTA114ET-Q 50 V, 100 mA PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ Production
PDTA114EU-Q 50 V, 100 mA PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ Production
PDTA114TE PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = open EndOfLife
PDTA114TM PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = open Production
PDTA114TMB PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = open Production
PDTA114TT PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = open Production
PDTA114TU PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = open Production
PDTA114YE EndOfLife
PDTA114YM PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ Production
PDTA114YMB PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = 47 kΩ Production
PDTA114YQC-Q 50 V, 100 mA PNP resistor-equipped transistors Production
PDTA114YT-Q 50 V, 100 mA PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ Production
PDTA114YU-Q PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ Production
PDTA115EE PNP resistor-equipped transistors; R1 = 100 kOhm, R2 = 100 kOhm EndOfLife
PDTA115EMB PNP resistor-equipped transistor; R1 = 100 kΩ, R2 = 100 kΩ Production
PDTA115ET PNP resistor-equipped transistor; R1 = 100 kΩ, R2 = 100 kΩ Production
PDTA115EU-Q PNP resistor-equipped transistor; R1 = 100 kΩ, R2 = 100 kΩ Production
PDTA115TE PNP resistor-equipped transistors; R1 = 100 kOhm, R2 = open EndOfLife
PDTA115TM PNP resistor-equipped transistors; R1 = 100 kOhm, R2 = open Production
PDTA115TMB PNP resistor-equipped transistor; R1 = 100 kΩ, R2 = open Production
PDTA115TT PNP resistor-equipped transistors; R1 = 100 kOhm, R2 = open Production
PDTA115TU PNP resistor-equipped transistors; R1 = 100 kOhm, R2 = open Production
PDTA123EE PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm EndOfLife
PDTA123EM PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ Production
PDTA123EMB PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ Production
PDTA123ET PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ Production
PDTA123EU-Q PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ Production
PDTA123JE EndOfLife
PDTA123JM 50 V, 100 mA PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ Production
PDTA123JMB PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ Production
PDTA123JQC-Q 50 V, 100 mA PNP resistor-equipped transistors Production
PDTA123JT 50 V, 100 mA PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ Production
PDTA123JT-Q 50 V, 100 mA PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ Production
PDTA123JU 50 V, 100 mA PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ Production
PDTA123TMB PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open Production
PDTA123TT PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = open Production
PDTA123YMB PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ Production
PDTA123YQB-Q 50 V, 100 mA PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2: 10 kΩ Production
PDTA123YU-Q 50 V, 100 mA PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ Production
PDTA124EK EndOfLife
PDTA124EM-Q 50 V, 100 mA PNP resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ Production
PDTA124EMB PNP resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ Production
PDTA124EQA 50 V, 100 mA PNP resistor-equipped transistors Production
PDTA124EQB-Q 50 V, 100 mA PNP resistor-equipped transistors Production
PDTA124EQC-Q 50 V, 100 mA PNP resistor-equipped transistors Production
PDTA124ES EndOfLife
PDTA124ET-Q 50 V, 100 mA PNP resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ Production
PDTA124EU-Q 50 V, 100 mA PNP resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ Production
PDTA124TMB PNP resistor-equipped transistor; R1 = 22 kΩ, R2 = open Production
PDTA124XMB PNP resistor-equipped transistor; R1 = 22 kΩ, R2 = 47 kΩ Production
PDTA124XQC-Q 50 V, 100 mA PNP resistor-equipped transistors Production
PDTA124XT-Q PNP resistor-equipped transistor; R1 = 22 kΩ, R2 = 47 kΩ Production
PDTA143EMB PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ Production
PDTA143EQB-Q 50 V, 100 mA PNP resistor-equipped transistors Production
PDTA143EQC-Q 50 V, 100 mA PNP resistor-equipped transistors Production
PDTA143TMB 50 V, 100 mA PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = open Production
PDTA143TU-Q 50 V, 100 mA PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = open Production
PDTA143XM-Q 50 V, 100 mA PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 10 kΩ Production
PDTA143XMB PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 10 kΩ Production
PDTA143XQC-Q 50 V, 100 mA PNP resistor-equipped transistors Production
PDTA143XT-Q 50 V, 100 mA PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 10 kΩ Production
PDTA143XU-Q 50 V, 100 mA PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 10 kΩ Production
PDTA143ZMB PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ Production
PDTA143ZQC-Q 50 V, 100 mA PNP resistor-equipped transistors Production
PDTA143ZT-Q 50 V, 100 mA PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 47  kΩ Production
PDTA143ZU-Q 50 V, 100 mA PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 47  kΩ Production
PDTA144EE PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 47 kΩ EndOfLife
PDTA144EM-Q PNP resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ Production
PDTA144EMB PNP resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ Production
PDTA144EQB-Q 50 V, 100 mA PNP resistor-equipped transistors Production
PDTA144EQC-Q 50 V, 100 mA PNP resistor-equipped transistors Production
PDTA144ET-Q PNP resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ Production
PDTA144EU-Q 50 V, 100 mA PNP resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ Production
PDTA144TMB PNP resistor-equipped transistor; R1 = 47 kΩ, R2 = open Production
PDTA144VMB PNP resistor-equipped transistor; R1 = 47 kΩ, R2 = 10 kΩ Production
PDTA144WMB PNP resistor-equipped transistor; R1 = 47 kΩ, R2 = 22 kΩ Production
PDTB123YT-Q 50 V, 500 mA PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ Production
PDTC114EM-Q 50 V, 100 mA NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ Production
PDTC114EMB NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ Production
PDTC114EU-Q NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ Production
PDTC114TMB NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = open Production
PDTC114YM-Q 50 V, 100 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 47 kΩ Production
PDTC114YT-Q 50 V, 100 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 47 kΩ Production
PDTC114YU-Q 50 V, 100 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 47 kΩ Production
PDTC115EMB NPN resistor-equipped transistor; R1 = 100 kΩ, R2 = 100 kΩ Production
PDTC115ET 50 V, 20 mA NPN resistor-equipped transistor; R1 = 100 kΩ, R2 = 100 kΩ Production
PDTC115EU-Q 50 V, 20 mA NPN resistor-equipped transistor; R1 = 100 kOhm, R2 = 100 kOhm Production
PDTC115TMB NPN resistor-equipped transistor; R1 = 100 kΩ, R2 = open Production
PDTC123EM 50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ Production
PDTC123EMB NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ Production
PDTC123ET-Q 50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ Production
PDTC123EU 50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ Production
PDTC123JM-Q 50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ Production
PDTC123JMB NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ Production
PDTC123JT-Q 50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ Production
PDTC123JU-Q 50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ Production
PDTC123TMB NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open Production
PDTC123TU 50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open Production
PDTC123YM-Q NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ Production
PDTC123YMB NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ Production
PDTC123YQB-Q 50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2: 10 kΩ Production
PDTC123YT-Q NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ Production
PDTC123YU-Q NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ Production
PDTC124EM 50 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ Production
PDTC124EMB NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ Production
PDTC124ET-Q 50 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ Production
PDTC124EU-Q 50 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ Production
PDTC124TM 50 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = open Production
PDTC124TMB NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = open Production
PDTC124TT 50 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = open Production
PDTC124TU 50 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = open Production
PDTC124XM-Q 50 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 47 kΩ Production
PDTC124XMB NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 47 kΩ Production
PDTC124XT-Q 50 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 47 kΩ Production
PDTC124XU-Q 50 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 47 kΩ Production
PDTC143EM-Q 50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7  kΩ Production
PDTC143EMB NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ Production
PDTC143ET-Q 50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ Production
PDTC143EU-Q 50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ Production
PDTC143TM-Q 50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = open Production
PDTC143TMB 50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = open Production
PDTC143TT-Q 50 V, 100 mA NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open Production
PDTC143TU 50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = open Production
PDTC143XM 50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 10 kΩ Production
PDTC143XMB NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 10 kΩ Production
PDTC143XT 50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 10 kΩ Production
PDTC143XU-Q 50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 10 kΩ Production
PDTC143ZM-Q 50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 47  kΩ Production
PDTC143ZMB NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 47 kΩ Production
PDTC143ZT-Q 50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 47  kΩ Production
PDTC143ZU-Q 50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 47  kΩ Production
PDTC144EM-Q 50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ Production
PDTC144EMB 50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ Production
PDTC144ET-Q 50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ Production
PDTC144EU-Q 50 V, 100 mA PNP resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ Production
PDTC144TMB NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = open Production
PDTC144VM-Q 50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 10 kΩ Production
PDTC144VMB NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 10 kΩ Production
PDTC144VT-Q 50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 10 kΩ Production
PDTC144VU-Q 50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 10 kΩ Production
PDTC144WM-Q 50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 22 kΩ Production
PDTC144WMB NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 22 kΩ Production
PDTC144WT-Q 50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 22 kΩ Production
PDTC144WU 50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 22 kΩ Production
PUMF11 NPN resistor-equipped transistor; PNP general purpose transistor EndOfLife
PUMF12 PNP general purpose transistor; NPN resistor-equipped transistor EndOfLife
Visit our documentation center for all documentation

Marcom graphics (1)
文件名称 标题 类型 日期
DFN1006B-3_SOT883B_mk.png plastic, leadless ultra small plastic package; 3 solder lands; 0.35 mm pitch; 1 mm x 0.6 mm x 0.37 mm body Marcom graphics 2017-01-28

如果您有支持方面的疑问，请告知我们。如需获得设计支持，请告知我们并填写技术支持表格，我们会尽快回复您。

请访问我们的社区论坛或联系我们。


交叉参考