用于电池隔离的ASFET专为多节电池供电设备而设计：
- 在故障情况下，由于在故障引起深度放电时，大电流下的电路电感会产生电压，因此电池隔离MOSFET通常会进入线性模式
- 增强的SOA MOSFET继续安全可控地运行，直到关闭为止，电池与负载电路完全隔离
- 正常工作时，需要低导通电阻才能实现低传导损耗，但需要优化参数以实现安全的电池隔离
- 稳健的电池隔离MOSFET可用作设备批准的主要保护
- 可能需要低Vt，因为电池保护IC可能只有2-3 V栅极驱动
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产品
| 型号 | 描述 | 状态 | 快速访问 |
|---|---|---|---|
| PSMN0R9-30ULD | N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in SOT1023A enhanced package for UL2595, using NextPowerS3 Schottky-Plus Technology | Production | |
| PSMN0R9-30YLD | N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
| PSMN1R0-40SSH | N-channel 40 V, 1 mΩ, 325 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology | Production | |
| PSMN1R0-40ULD | N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in SOT1023A enhanced package for UL2595, using NextPower-S3 Schottky-Plus technology | Production | |
| PSMN1R0-40YLD | N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology | Production | |
| PSMN1R4-40YLD | N-channel 40 V, 1.4 mΩ, 240 A logic level MOSFET in LFPAK56 using NextPower-S3 technology | Production | |
| PSMN1R6-30MLH | N-channel 30 V, 1.9 mΩ, 160 A logic level MOSFET in LFPAK33 using NextPowerS3 technology | Production | |
| PSMN3R7-100BSE | N-channel 100 V, 3.95 mΩ, standard level MOSFET in D2PAK | Production | |
| PSMN3R9-100YSF | NextPower 100 V, 4.3 mΩ N-channel MOSFET in LFPAK56 package | Development | |
| PSMNR58-30YLH | N-channel 30 V, 0.67 mΩ, 380 A logic level MOSFET in LFPAK56E using NextPowerS3 technology | Production | |
| PSMNR70-30YLH | N-channel 30 V, 0.82 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 technology | Production | |
| PSMNR70-40SSH | N-channel 40 V, 0.7 mΩ, 425 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology | Production | |
| PSMNR90-40SSH | N-channel 40 V, 0.9 mΩ, 375 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology | Production |
Visit our documentation center for all documentation
Application note (2) |
|||
|---|---|---|---|
| 文件名称 | 标题 | 类型 | 日期 |
| AN90016 | Maximum continuous currents in NEXPERIA LFPAK power MOSFETs | Application note | 2020-09-03 |
| AN90001 | Designing in MOSFETs for safe and reliable gate-drive operation | Application note | 2017-05-05 |
Selection guide (1) |
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| 文件名称 | 标题 | 类型 | 日期 |
| Nexperia_Selection_guide_2021 | Nexperia Selection Guide 2021 | Selection guide | 2021-01-08 |