用于电池隔离的ASFET

增强的SOA、稳健性和最大电流

如今大多数手持和电池供电的工具和设备都依赖于多节锂离子电池组。锂离子电池具有能量密度高的优点。但是在故障情况下,这可能会成为问题,因为它有可能导致大量不受控制的能量释放,从而导致负载过热和潜在的电路火灾。要在安全隔离电池并关闭系统前以可控的方式处理大量放电,需要非常稳健且具有高热效的MOSFET。Nexperia最稳健的LFPAK封装器件的理想应用。   

用于电池隔离的ASFET专为多节电池供电设备而设计:

  • 在故障情况下,由于在故障引起深度放电时,大电流下的电路电感会产生电压,因此电池隔离MOSFET通常会进入线性模式
  • 增强的SOA MOSFET继续安全可控地运行,直到关闭为止,电池与负载电路完全隔离
  • 正常工作时,需要低导通电阻才能实现低传导损耗,但需要优化参数以实现安全的电池隔离
  • 稳健的电池隔离MOSFET可用作设备批准的主要保护
  • 可能需要低Vt,因为电池保护IC可能只有2-3 V栅极驱动

参数搜索

ASFETs for Battery Isolation
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产品

型号 描述 状态 快速访问
PSMN0R9-30ULD N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in SOT1023A enhanced package for UL2595, using NextPowerS3 Schottky-Plus Technology Production
PSMN0R9-30YLD N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology Production
PSMN1R0-40SSH N-channel 40 V, 1 mΩ, 325 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology Production
PSMN1R0-40ULD N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in SOT1023A enhanced package for UL2595, using NextPower-S3 Schottky-Plus technology Production
PSMN1R0-40YLD N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology Production
PSMN1R4-40YLD N-channel 40 V, 1.4 mΩ, 240 A logic level MOSFET in LFPAK56 using NextPower-S3 technology Production
PSMN1R5-50YLH N-channel 50 V, 1.7 mOhm, 200 A continuous, logic level MOSFET in LFPAK56E using NextPower-S3 technology Production
PSMN1R6-30MLH N-channel 30 V, 1.9 mΩ, 160 A logic level MOSFET in LFPAK33 using NextPowerS3 technology Production
PSMN2R0-55YLH N-channel 55 V, 2.2 mOhm, 200 A continuous, logic level MOSFET in LFPAK56E using NextPower-S3 technology Production
PSMN3R7-100BSE N-channel 100 V, 3.95 mΩ, standard level MOSFET in D2PAK Production
PSMN3R9-100YSF NextPower 100 V, 4.3 mOhm, 120 A, N-channel MOSFET in LFPAK56E package Production
PSMNR58-30YLH N-channel 30 V, 0.67 mΩ, 380 A logic level MOSFET in LFPAK56E using NextPowerS3 technology Production
PSMNR70-30YLH N-channel 30 V, 0.82 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 technology Production
PSMNR70-40SSH N-channel 40 V, 0.7 mΩ, 425 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology Production
PSMNR90-40SSH N-channel 40 V, 0.9 mΩ, 375 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology Production
Visit our documentation center for all documentation

Application note (2)

文件名称 标题 类型 日期
AN90016 Maximum continuous currents in NEXPERIA LFPAK power MOSFETs Application note 2020-09-03
AN90001 Designing in MOSFETs for safe and reliable gate-drive operation Application note 2017-05-05

Selection guide (1)

文件名称 标题 类型 日期
Nexperia_Selection_guide_2021 Nexperia Selection Guide 2021 Selection guide 2021-01-08

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