双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

SiC power devices

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

新闻和活动

Statement from Nexperia
  • Statement
十一月 12, 2026

Statement from Nexperia

Nexperia B.V. today issues a statement to provide an update on recent legal developments ...

阅读更多
Statement from the court-appointed officials at Nexperia
  • Statement
十一月 12, 2026

Statement from the court-appointed officials at ...

Nexperia B.V. today shares a statement from the officials appointed by the Dutch Enterprise Chamber

阅读更多
Nexperia expands SiC portfolio with 750 V trench MOSFETs for high-efficiency power conversion applications
  • 新闻稿
十一月 11, 2026

Nexperia expands SiC portfolio with 750 V trench ...

Combining low switching losses, temperature-stable RDS(on) and the introduction of TOLL ...

阅读更多
Nexperia expands GaN portfolio with ultra-low-resistance devices for next-generation power density and efficiency
  • 新闻稿
十一月 10, 2026

Nexperia expands GaN portfolio with ...

New 18 V to 200 V GaN devices offer RDS(on) down to 0.32 mΩ in compact thermally enhanced ...

阅读更多
Statement from Nexperia
  • Statement
十一月 05, 2026

Statement from Nexperia

Nexperia B.V. today issues a statement to provide an update on recent legal developments ...

阅读更多
Nexperia builds momentum with continued growth in Q3 2026
  • 新闻稿
十月 26, 2026

Nexperia builds momentum with continued growth in ...

Strong cash generation supports continued investment in innovation and resilient supply.

阅读更多