双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

SiC power devices

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

新闻和活动

  • 新闻稿
六月 15, 2026

阅读更多
IAV and Nexperia Rethink High-Voltage Architectures to Unlock More Value from Every Battery Cell
  • 新闻稿
六月 11, 2026

IAV and Nexperia Rethink High-Voltage Architectures ...

The “ONE Inverter” concept combines Nexperia’s innovative GaN and SiC technologies with IAV’s ...

阅读更多
Nexperia expands 650 V GaN FET portfolio with multiple RDS(on) classes and industry-standard packages
  • 新闻稿
六月 10, 2026

Nexperia expands 650 V GaN FET portfolio with ...

Comprehensive 650 V GaN portfolio enables flexible, high-efficiency system design across ...

阅读更多
Nexperia and Semikron Danfoss Explore Strategic Collaboration on SiC Power Modules for Automotive Applications
  • 新闻稿
六月 09, 2026

Nexperia and Semikron Danfoss Explore Strategic ...

Combining semiconductor and module expertise to advance high-performance solutions for electric ...

阅读更多
Nexperia brings QDPAK packaging to 1200 V SiC MOSFETs to overcome thermal bottlenecks in high-power designs
  • 新闻稿
六月 09, 2026

Nexperia brings QDPAK packaging to 1200 V SiC ...

Top-side cooled SMD package provides a practical route to higher power density and system ...

阅读更多
  • Press statement
五月 29, 2026

Today, Friday 29 May, a hearing took place in the court of Arnhem, the Netherlands, in context ...

阅读更多